Study of Nonpolar GaN/ZnO Heterostructures Grown by Molecular Beam Epitaxy

Chang, Cheng-Yuan; Huang, Huei Min; Lan, Yu-Pin; Lu, Tien−Chang; Tu, Li; Hsieh, Wen‐Pin

doi:10.1021/cg400497r

Cited by 8 publications

(3 citation statements)

References 27 publications

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“…ZnO is an inorganic II–VI semiconductor with a direct bandgap (3.37 eV) and highly accepted nanomaterial in the field of photocatalysis, batteries, solar cells, light emitting diodes (LED), photodetector (PD), piezoelectric nanogenerators, biomedical devices, optical sensors, chemical sensors, and gas sensors due to its unique intrinsic properties. Over the last decade, multishaped ZnO micro/nanostructures in the form of rods, tetrapods, brush, wires, sheet, tubes, tower, disk, spheres, fern, peanut, and flower have been produced by various synthesis strategies such as hydrothermal, sol–gel, solvothermal, ultrasonication, microwave, chemical vapor deposition, physical vapor deposition and molecular beam epitaxy, magnetron sputtering methods. Literature reports suggest that the ZnO micro/nanostructures widens our knowledge on the dependency of the device performances as a function of geometrical factors such as structural architecture, particle size, surface to volume ratio and its crystallinity.…”

Section: Introductionmentioning

confidence: 99%

Regulation of Charge Carrier Dynamics in ZnO Microarchitecture‐Based UV/Visible Photodetector via Photonic‐Strain Induced Effects

Purusothaman

Alluri

Chandrasekhar

et al. 2018

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A feasible, morphological influence on photoresponse behavior of ZnO microarchitectures such as microwire (MW), coral-like microstrip (CMS), fibril-like clustered microwire (F-MW) grown by one-step carrier gas/metal catalyst "free" vapor transport technique is reported. Among them, ZnO F-MW exhibits higher photocurrent (I ) response, i.e., I > I > I . The unique structural alignment of ZnO F-MW has enhanced the I from 14.2 to 186, 221, 290 µA upon various light intensities such as 0 to 6, 11, 17 mW cm at λ . Herein, the nature of the as-fabricated ZnO photodetector (PD) is also demonstrated modulated by tuning the inner crystals piezoelectric potential through the piezo-phototronic effect. The I response of PD decreases monotonically by introducing compressive strain along the length of the device, which is due to the synergistic effect between the induced piezoelectric polarization and photogenerated charge carriers across the metal-semiconductor interface. The current behavior observed at the two interfaces acting as the source (S) and drain (D) is carefully investigated by analyzing the Schottky barrier heights (Φ ). This work can pave the way for the development of geometrically modified strain induced performances of PD to promote next generation self-powered optoelectronic integrated devices and switches.

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Section: Introductionmentioning

confidence: 99%

Regulation of Charge Carrier Dynamics in ZnO Microarchitecture‐Based UV/Visible Photodetector via Photonic‐Strain Induced Effects

Purusothaman

Alluri

Chandrasekhar

et al. 2018

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“…Growth and design of group-III nitride semiconductor heterostructures on semipolar planes have attracted intense research interest due to the reduction of the internal electric field inherently existing in polar III-nitrides growing along the c axis. [1][2][3][4][5][6][7] In comparison with nonpolar GaN, semipolar GaN grown on (112 ¯2) and (202 ¯1) atomic planes has the merits of a high indium incorporation efficiency 8 and a wide growth window. 9,10 (112 ¯2) semipolar GaN is of a nearly free electric field and thus preferred as a growth template of long-wavelength GaN-based optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

In situ asymmetric island sidewall growth of high-quality semipolar (112̄2) GaN on m-plane sapphire

Shen

Liu

et al. 2016

CrystEngComm

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In situ asymmetric island sidewall growth (AISG) was developed to enhance Ga-face facet growth and improve the crystalline quality of (1122) GaN epilayers on m-plane sapphire substrates. In the early growth stage island shaping and sidewall faceting were distinct and controlled by growth design. Using in situ AISG, {0002} instead of {1103} sidewall facets were formed on the Ga-rich island surface, which eliminated formation of a {1103} phase during subsequent layer growth of semipolar GaN. Enhanced Ga-face sidewall facet growth led to +c regions overlapping −c regions, which reduced defect density. Pure semipolar (1122) epilayers with a reduced surface striation density and a basal-plane stacking fault density of 8 × 10 3 cm −1 were obtained. The observation of a narrow E H 2 peak and an intense E 1 (LO) peak in Raman spectra indicates that almost strain-free high-quality semipolar (1122) GaN films were achieved. The photoluminescence emission intensity from the (1122) GaN film prepared by in situ AISG was dominated by band-edge emission and enhanced ∼4 times more than that from conventional (1122) GaN.

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“…Moreover, ZnO nanostructures can be classified into different types of dimensions from 0D to 3D leading to different applications such as photocatalytic activity, solar cells, anti-bacterial activities, supercapacitors, and chemical and biological sensors [19][20][21]. The ZnO has been synthesized in various methods including hydrothermal synthesis [22], electrochemical deposition [23], chemical vapor deposition [24,25], spray pyrolysis [26], radio-frequency magnetron sputtering [27], molecular beam epitaxy [28], pulsed laser deposition [29], arc discharge method [30], and sparking method [31].…”

Section: Introductionmentioning

confidence: 99%

Sparked ZnO nanoparticles-based electrochemical sensor for onsite determination of glyphosate residues

et al. 2023

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Glyphosate (N-(phosphonomethyl)glycine) is well known nonselective and broad-spectrum herbicide that has been extensively used in agricultural areas around the world to increase agricultural productivity. However, the utilization of glyphosate can cause environmental contamination and health problems. Therefore, the detection of glyphosate with a fast, low-cost, and portable sensor is still important. In this work, the electrochemical sensor has been developed by modifying of working surface on the screen-printed silver electrode (SPAgE) with a mixtures solution between zinc oxide nanoparticles (ZnO-NPs) and poly (diallyldimethylammonium chloride) (PDDA) by the drop-casting process. The ZnO-NPs have been prepared based on a sparking method by using pure zinc wires. The ZnO-NPs/PDDA/SPAgE sensor shows a wide range of glyphosate detection (0 µM - 5 mM). The limit of detection of ZnO-NPs/PDDA/SPAgE is 2.84 µM. The ZnO-NPs/PDDA/SPAgE sensor exhibits high selective towards glyphosate with minimal interference from other commonly used herbicides including paraquat, butachlor-propanil and glufosinate-ammonium. Furthermore, the ZnO-NPs/PDDA/SPAgE sensor demonstrates a good estimation of glyphosate concentration in real samples such as green tea, corn juice and mango juice.

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Study of Nonpolar GaN/ZnO Heterostructures Grown by Molecular Beam Epitaxy

Cited by 8 publications

References 27 publications

Regulation of Charge Carrier Dynamics in ZnO Microarchitecture‐Based UV/Visible Photodetector via Photonic‐Strain Induced Effects

Regulation of Charge Carrier Dynamics in ZnO Microarchitecture‐Based UV/Visible Photodetector via Photonic‐Strain Induced Effects

In situ asymmetric island sidewall growth of high-quality semipolar (112̄2) GaN on m-plane sapphire

Sparked ZnO nanoparticles-based electrochemical sensor for onsite determination of glyphosate residues

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