Study of magnetization relaxation in Co thin films prepared by substrate rotation

Chowdhury, Niru; Mallick, Sougata; Mallik, Srijani; Bedanta, Subhankar

doi:10.1016/j.tsf.2016.08.043

Cited by 23 publications

(17 citation statements)

References 27 publications

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“…Due to the geometry of our deposition chamber, Fe plume was at an angle of 30 • with respect to the substrate normal. Due to the oblique angle of deposition, uniaxial anisotropy is induced in the system [25,26,17,18,28,29,30]. It has been discussed in previous reports that the grains of the material form chain like structure along the perpendicular to the in-plane projection of the plume direction.…”

Section: Resultsmentioning

confidence: 99%

“…Along this direction, an elongation in the grain structure is expected which in turn induces a uniaxial anisotropy in the system The black colored open circles and the red line correspond to the measured data and the fit to equation 2, respectively. [25,26,17,18,28,29,30]. The origin of the oblique angle of deposition induced uniaxial anisotropy is the long range dipolar interaction between the grains [25,26,17].…”

Section: Resultsmentioning

confidence: 99%

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Tuning spinterface properties in iron/fullerene thin films

et al. 2019

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In ferromagnetic (FM) metal/organic semiconductor (OSC) heterostructures charge transfer can occur which leads to induction of magnetism in the non-magnetic OSC. This phenomenon has been described by the change in the density of states in the OSC which leads to a finite magnetic moment at the OSC interface and it is called the "spinterface". One of the main motivation in this field of organic spintronics is how to control the magnetic moment in the spinterface. In this regard, there are several open questions such as (i) which combination of FM and OSC can lead to more moment at the spinterface? (ii) Is the thickness of OSC also important? (iii) How does the spinterface moment vary with the FM thickness? (iv) Does the crystalline quality of the FM matters? (v) What is the effect of spinterface on magnetization reversal, domain structure and anisotropy? In this context, we have tried to answer the last three issues in this paper by studying Fe/C 60 bilayers of variable Fe thickness deposited on Si substrates. We find that both the induced moment and thickness of the spinterface vary proportionally with the Fe thickness. Such behavior is explained in terms of the growth quality of the Fe layer on the native oxide of the Si (100) substrate. The magnetization reversal, domain structure and anisotropy of these bilayer samples were studied and compared with their respective reference samples without having the C 60 layer. It is observed that the formation of spinterface leads to reduction in uniaxial anisotropy in Fe/C 60 on Si (100) in comparison to their reference samples.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Tuning spinterface properties in iron/fullerene thin films

et al. 2019

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“…Other possible effects including temperature of measurement or temperature of sample deposition are ruled out, as all our thin film fabrications and measurements took place in a temperature-controlled environment. We also made sure the experiments were carried out in such way that minimizes some other common reasons that could explain the observed effects, such as shadow deposition [26] and tensile or compressive stress [27,28]. Within this study, we limited our investigation to atomic force measurement of substrate roughness and we only focused on samples synthesis, magnetic properties and micromagnetics.…”

Section: Discussionmentioning

confidence: 99%

Study of roughness effect in Fe and Co thin films prepared by plasma magnetron sputtering

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et al. 2019

Physica B: Condensed Matter

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We report the experimental and theoretical study of a substrate roughness surface induced magnetic anisotropy in thin films of Fe and Co. The experimental results confirm previously reported data on NiFe thin films and indicate that rough substrates increase the magnetic coercive fields in magnetic thin films. This effect is most prominent in films of thickness comparable to the surface roughness values and materials of small volume magnetic anisotropy. We determined the coercive field of 15 nm Fe thin film sample deposited onto rough PVDF to be 256 Oe, which is more than doubled the value of the coercive field of 15 nm Fe films coated under identical conditions, onto smooth Si substrates. The effect is visible for Co films but weaken by its increased volume magnetic anisotropy. These results are important for applications based on magnetic thin film where the magnetic properties could be adjusted via substrate roughness engineering

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“…Here the normalized intensity as a function of time basically reflects the net magnetization relaxation of the sample. Amongst various raised models to explain magnetization relaxation phenomena Fatuzzo-Labrune model is extensively used for FM thin films [38][39][40][41][42][43]. However, the approximation of single energy barrier made in this model does not hold for a real thin film which consists of a distribution of energy barrier with defects and inhomogeneity throughout the surface.…”

Section: Relaxation Dynamicsmentioning

confidence: 99%

Strain engineered domain structure and their relaxation in perpendicularly magnetized Co/Pt deposited on flexible polyimide

et al. 2020

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The demand of fast and power efficient spintronic devices with flexibility requires additional energy for magnetization manipulation. Stress/ strain have shown their potentials for tuning magnetic properties to the desired level. Here, we report a systematic study for the effect of both tensile and compressive stresses on the magnetic anisotropy (MA). Further the effect of stress on the domain structure and magnetization relaxation mechanism in a perpendicularly magnetized Co/Pt film has been studied. It is observed that a minimal in-plane tensile strain has increased the coercivity of the film by 33% of its initial value, while a very small change of coercivity has been found under compressive strain. The size of ferromagnetic domains decreases under tensile strain, while no change is observed under the compressive strain. Magnetization relaxation measured at sub-coercive field values yields a longer relaxation time in the strained state. OPEN ACCESS RECEIVED

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Study of magnetization relaxation in Co thin films prepared by substrate rotation

Cited by 23 publications

References 27 publications

Tuning spinterface properties in iron/fullerene thin films

Tuning spinterface properties in iron/fullerene thin films

Study of roughness effect in Fe and Co thin films prepared by plasma magnetron sputtering

Strain engineered domain structure and their relaxation in perpendicularly magnetized Co/Pt deposited on flexible polyimide

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