Study of indium tin oxide thin film for separative extended gate ISFET

Yin, Li-Te; Chou, Jung-Chuan; Chung, Wen-Yaw; Sun, Tai‐Ping; Hsiung, Shen‐Kan

doi:10.1016/s0254-0584(00)00373-4

Cited by 91 publications

(52 citation statements)

References 15 publications

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“…The sensitivities of the ITO SEGFET was calculated from the slope in the Figure 6b for fixed I D = 200 µA. ITO films presented a sensitivity about 53 mV/pH unity, close to the expected Nernstian theoretical value (59,15 mV/pH) 26 to pH sensors and in and in good agreement with commercial ITO films pH sensors 5 , which presented 58 mV/pH of sensitivity 5 . Comparing with other synthetized ITO films, a sensitivity of 50 mV/pH was found by Lue et al 27 using ITO deposited on flexible polyethylene terephthalate (PET) by RF sputtering 27 .…”

Section: Resultssupporting

confidence: 69%

“…Due to the latter properties, ITO has been used as optically transparent conducting electrode in a range of applications [2][3][4] . Recently, ITO films have been used as work electrode in the development of bioengineering devices such as ion sensors and biosensors [5][6][7] . The emerging sensor and biosensor technology based on ITO films has emerged as an advantageous alternative for applications in medicine 8,9 .…”

Section: Introductionmentioning

confidence: 99%

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Indium tin oxide synthesized by a low cost route as SEGFET pH sensor

et al. 2013

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Polycrystalline ITO films with good optoelectronics characteristics and homogeneous surface has been obtained upon annealing at 550 °C in N 2 atmosphere using a low-cost chemical vapor deposition (CVD) system. The films were evaluated as pH sensors in separative extended gate field-effect transistor (SEGFET) apparatus, exhibiting a sensitivity of 53 mV/pH, close to the expected Nernstian theoretical value for ion sensitive materials. The use of CVD process to synthesize ITO, as described here, may represent an alternative for fabrication of SEGFET pH sensors at low cost to be used in disposable biosensors since H + ions are the product of several oxireductase enzymes.

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Section: Resultssupporting

confidence: 69%

Section: Introductionmentioning

confidence: 99%

Indium tin oxide synthesized by a low cost route as SEGFET pH sensor

et al. 2013

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“…According to the literature, some insulating materials that were applied as sensing material in conventional ISFETs have failed in SEGFETs [15]. Aiming to solve this problem, conducting materials, specifically oxides, have been successfully used presenting Nernstian sensitivity [15,16]. In addition, synthetic metal thin films such as N-PANI, which show very good control of physicochemical properties, seem to be ideal for such application.…”

Section: Introductionmentioning

confidence: 99%

Nanostructured polyaniline thin films as pH sensing membranes in FET-based devices

Vieira

Fernandes

Faceto

et al. 2011

Sensors and Actuators B: Chemical

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“…The ion-sensitive field effect transistor (ISFET) is an integrated device consisting of a metal-oxide-semiconductor field-effect-transistor (MOSFET) in which a sensing electrode replaces the gate 4 . This device has been developed to operate as a chemically selective electrode 5 . Compared with conventional pH-sensitive glass electrodes, the chemical sensor offers numerous advantages such as low cost, the possibility of miniaturization, and high input and low output impedance 6 .…”

Section: Introductionmentioning

confidence: 99%