Study of Ga+ implantation in Si diodes: effect on optoelectronic properties using micro-spectroscopy

Deshpande, P K; Vilayurganapathy, Subramanian; Bhat, K. N.; Ghosh, Ambarish

doi:10.1007/s00339-019-2467-2

Cited by 5 publications

(3 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Two optical cylinders are typically connected at an angle of 50-60°, Ion implantation plays an important role in the preparation of opto-electronic devices by achieving good semiconductor doping with a sub-micron spatial precision. Deshpande et al [55] investigated FIB-induced gallium doping on shallow silicon p-n junction devices in the micron-scale region and studied radiation damage, surface amorphous layer, and photoelectric performance. They concluded that formation of amorphous silicon layers can reduce the photoelectric performance of the diode.…”

Section: Fib-sem Dual-beam Systemmentioning

confidence: 99%

The 3D Controllable Fabrication of Nanomaterials with FIB-SEM Synchronization Technology

Zhao

Cui

et al. 2023

Nanomaterials

View full text Add to dashboard Cite

Nanomaterials with unique structures and functions have been widely used in the fields of microelectronics, biology, medicine, and aerospace, etc. With advantages of high resolution and multi functions (e.g., milling, deposition, and implantation), focused ion beam (FIB) technology has been widely developed due to urgent demands for the 3D fabrication of nanomaterials in recent years. In this paper, FIB technology is illustrated in detail, including ion optical systems, operating modes, and combining equipment with other systems. Together with the in situ and real-time monitoring of scanning electron microscopy (SEM) imaging, a FIB-SEM synchronization system achieved 3D controllable fabrication from conductive to semiconductive and insulative nanomaterials. The controllable FIB-SEM processing of conductive nanomaterials with a high precision is studied, especially for the FIB-induced deposition (FIBID) 3D nano-patterning and nano-origami. As for semiconductive nanomaterials, the realization of high resolution and controllability is focused on nano-origami and 3D milling with a high aspect ratio. The parameters of FIB-SEM and its working modes are analyzed and optimized to achieve the high aspect ratio fabrication and 3D reconstruction of insulative nanomaterials. Furthermore, the current challenges and future outlooks are prospected for the 3D controllable processing of flexible insulative materials with high resolution.

show abstract

Section: Fib-sem Dual-beam Systemmentioning

confidence: 99%

The 3D Controllable Fabrication of Nanomaterials with FIB-SEM Synchronization Technology

Zhao

Cui

et al. 2023

Nanomaterials

View full text Add to dashboard Cite

show abstract

“…For example, use of the popular gallium liquid metal ion source can lead to gallium (Ga + ) implantation in structures. In the field of photomask repair, this can cause detrimental effects such as reducing the mask’s optical transmission . Other side effects of Ga + implantation include amorphization, surface damage, and low lateral resolution in deposited features. ,, As an alternative to the gallium liquid metal ion source, gas field ion sources using helium (He + ) and neon (Ne + ) have also been developed and integrated in FIB systems .…”

Section: Introductionmentioning

confidence: 99%

Surface Reactions of Low-Energy Argon Ions with Organometallic Precursors

Bilgilisoy

Thorman

et al. 2020

J. Phys. Chem. C

View full text Add to dashboard Cite

A combination of in situ X-ray photoelectron spectroscopy and mass spectrometry has been used to elucidate the elementary surface reactions initiated by the interaction of low-energy (860 eV) argon ions with three organometallic precursors [Ru(CO)4I2, Co(CO)3NO, and WN(NMe2)3]. The effects of ion exposure on each precursor can be described by a largely sequential series of surface reactions. The initial step involves ion-induced decomposition of the precursor to create a nonvolatile deposit, followed by physical sputtering of the atoms in the deposit. For the precursors that contain CO ligands [Ru(CO)4I2 and Co(CO)3NO], ion-induced decomposition is accompanied by desorption of the majority of the CO groups. This is in marked contrast to previous studies of low-energy electron-induced reactions with the same precursors where precursor decomposition yielded only partial desorption of the CO ligands. Conversely, argon ion bombardment of WN(NMe2)3 led to decomposition without ligand loss. For all three precursors, the initial ion-induced decomposition step was not accompanied by significant desorption of intact precursor molecules, while during subsequent physical sputtering of the deposited atoms, ligand-derived organic and inorganic contaminants were removed at higher rates than the metals. This indicates that controlled ion beam deposition conditions could be used to produce deposits with high metal contents from all three precursors. Comparison of low-energy electron-induced reactions of these three precursors with results of this investigation indicates that secondary electrons do not play an important role in the deposition process, but rather precursor decomposition occurs via efficient ion–molecule energy transfer. These reactions are discussed in the context of focused ion beam-induced deposition.

show abstract

“…В последние годы [1][2][3][4][5][6] имплантация ионов различных химических элементов широко используется на практике для разработки и производства микроэлектронных полупроводниковых приборов. Особый интерес представляет использование в качестве инструмента радиационного легирования кристаллических подложек ионов Н + (протонов).…”

Section: Introductionunclassified

Изучение микроструктуры кристаллов Si, подвергнутых облучению быстрыми Н-=SUP=-+-=/SUP=--ионами и термообработке, методами высокоразрешающей трехкристальной рентгеновской дифрактометрии и электронной просвечивающей микроскопии

Асадчиков¹,

Дьячкова²,

Золотов³

et al. 2019

Физика Твердого Тела

View full text Add to dashboard Cite

The structural features of the formation of radiation defects in proton-implanted layers of silicon wafers during their heat treatment are studied. New data on the nature, characteristics and concentration of microdefects in Si crystals irradiated with protons with energies of 100+200+300 Kev, with a total dose of 2·1016 ion/cm2, and the evolution of the defective structure during heat treatment in a wide temperature range from 200 to 1100°C were obtained from the analysis of the results of studies by high-resolution three-crystal X-ray diffractometry and transmission electron microscopy. This work was supported by the Ministry of Science and Higher Education within the State assignment FSRC «Crystallography and Photonics» RAS.

show abstract

Study of Ga+ implantation in Si diodes: effect on optoelectronic properties using micro-spectroscopy

Cited by 5 publications

References 17 publications

The 3D Controllable Fabrication of Nanomaterials with FIB-SEM Synchronization Technology

The 3D Controllable Fabrication of Nanomaterials with FIB-SEM Synchronization Technology

Surface Reactions of Low-Energy Argon Ions with Organometallic Precursors

Contact Info

Product

Resources

About