Study of a nitrogen-doped ZnO film with synchrotron radiation

Zou, Changwei; Yan, Xiaolong; Han, Jun; Chen, R. Q.; Gao, Wei; Metson, James B.

doi:10.1063/1.3125255

Cited by 39 publications

(22 citation statements)

References 29 publications

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“…These peaks, close to the vibrational energy of N 2 in air, are assigned to lattice-bound N 2 in ZnO. P 3 peak is similar to that of the characteristic absorption peak of N 2 O and has been attributed to the N 1s to 2pσ * transition in N-O species [18]. Accordingly, P 3 is ascribed to N at Zn sites.…”

Section: Methodsmentioning

confidence: 68%

Molecular nitrogen acceptors in ZnO nanowires induced by nitrogen plasma annealing

et al. 2015

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X-ray absorption near-edge spectroscopy, photoluminescence, cathodoluminescence, and Raman spectroscopy have been used to investigate the chemical states of nitrogen dopants in ZnO nanowires. It is found that nitrogen exists in multiple states: N O , N Zn , and loosely bound N 2 molecule. The results establish a direct link between a donor-acceptor pair emission at 3.232 eV and the concentration of loosely bound N 2 . This work confirms that N 2 at Zn site is a potential candidate for producing a shallow acceptor state in N-doped ZnO as theoretically predicted by Lambrecht and Boonchun [Phys. Rev. B 87, 195207 (2013)]. Additionally, shallow acceptor states arising from N O complexes have been ruled out in this paper.

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Section: Methodsmentioning

confidence: 68%

Molecular nitrogen acceptors in ZnO nanowires induced by nitrogen plasma annealing

et al. 2015

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“…It is obvious that each of the spectra has three N 1s peaks, located near the binding energy of 395.5, 399.2, and 404.8 eV, correspond to N-Zn, 9,10 C-N bonds, 11 and N-N pair at O site (N 2(O) ), 12 respectively. The content of N O is calculated to be 0.67 and 0.29 at.…”

mentioning

confidence: 99%

Effect of compressive stress on stability of N-doped p-type ZnO

Chen¹,

Zhang²,

Ye³

et al. 2011

Applied Physics Letters

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Nitrogen-doped p-type zinc oxide (p-ZnO:N) thin films were fabricated on a-/c-plane sapphire (a-/c-Al2O3) by plasma-assisted molecular beam epitaxy. Hall-effect measurements show that the p-type ZnO:N on c-Al2O3 degenerated into n-type after a preservation time; however, the one grown on a-Al2O3 showed good stability. The conversion of conductivity in the one grown on c-Al2O3 ascribed to the faster disappearance of NO and the growing N2(O), which is demonstrated by x-ray photoelectron spectroscopy (XPS). Compressive stress, caused by lattice misfit, was revealed by Raman spectra and optical absorption spectra, and it was regarded as the root of the instability in ZnO:N.

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“…[18][19][20] However, studies have since shown that N-doping compensates p-type behaviour by forming shallow donors rather than acceptors, consequently p-type ZnO is unlikely to form. [21][22][23][24][25] Point defects situated deep in the ZnO bandgap (E g ) give rise to photoluminescence (PL) referred to as deep-level emission (DLE) observed under excitation >E g . This DLE emission has been employed in visible light-emitting diodes 26,27 and photodetectors.…”

Section: Introductionmentioning

confidence: 99%

Influence of anneal atmosphere on ZnO-nanorod photoluminescent and morphological properties with self-powered photodetector performance

Hatch

Briscoe

Sapelkin

et al. 2013

Journal of Applied Physics

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High sensitivity and fast response and recovery times in a ZnO nanorod array/p-Si self-powered ultraviolet detector Appl. Phys. Lett. 101, 261108 (2012) ZnO nanorods synthesised using an aqueous pH 11 solution are shown to exhibit surface-sensitive morphology post-annealing in oxygen, air, and nitrogen as shown by scanning electron microscopy and transmission electron microscopy analysis. Raman analysis confirms the nanorods were nitrogen-doped and that nitrogen incorporation takes place during the synthesis procedure in the form of N-H x . A strong green photoluminescence is observed post-annealing for all samples, the intensity of which is dependent on the atmosphere of anneal. This luminescence is linked to zinc vacancies as recent reports have indicated that these defects are energetically favoured with the annealing conditions used herein. ZnO-nanorod/CuSCN diodes are fabricated to examine the effect of material properties on photodetector device performance. The devices exhibit a photocurrent at zero bias, creating a self-powered photodetector. A photocurrent response of 30 lA (at 6 mW cm

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Study of a nitrogen-doped ZnO film with synchrotron radiation

Cited by 39 publications

References 29 publications

Molecular nitrogen acceptors in ZnO nanowires induced by nitrogen plasma annealing

Molecular nitrogen acceptors in ZnO nanowires induced by nitrogen plasma annealing

Effect of compressive stress on stability of N-doped p-type ZnO

Influence of anneal atmosphere on ZnO-nanorod photoluminescent and morphological properties with self-powered photodetector performance

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