Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si<sub>3</sub>N<sub>4</sub>as Gate Dielectric and Passivation Layer

Zhang, Zhili; Yu, Guo; Zhang, Xiaodong; Deng, Xuguang; Li, Shuiming; Fan, Yuting; Sun, Shikun; Song, Liang; Tan, Shuxin; Wu, Dongdong; Li, Weiyi; Huang, Wei; Fu, Kai; Cai, Yong; Sun, Qian; Zhang, Baoshun

doi:10.1109/ted.2015.2510445

Cited by 105 publications

(38 citation statements)

References 24 publications

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“…15 A relatively low current collapse is observed, suggesting that HEMT device with a self-doped carbon doping of ∼6 × 10 18 cm -3 in Ga(Al)N buffer doesn't show serious electron trapping effect. A further study is in progress and will be published elsewhere.…”

Section: -5mentioning

confidence: 96%

Off-state electrical breakdown of AlGaN/GaN/Ga(Al)N HEMT heterostructure grown on Si(111)

Zhou

Gao

et al. 2016

AIP Advances

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Electrical breakdown characteristics of AlxGa1−xN buffer layers grown on Si(111) are investigated by varying the carbon concentration ([C]: from ∼1016 to 1019 cm−3), Al-composition (x = 0 and 7%), and buffer thickness (from 1.6 to 3.1 μm). A quantitative relationship between the growth conditions and carbon concentration ([C]) is established, which can guide to grow the Ga(Al)N layer with a given [C]. It is found that the carbon incorporation is sensitive to the growth temperature (T) (exponential relationship between [C] and 1/T) and the improvement of breakdown voltage by increasing [C] is observed to be limited when [C] exceeding 1019 cm−3, which is likely due to carbon self-compensation. By increasing the highly resistive (HR) Al0.07Ga0.93N buffer thickness from 1.6 to 3.1 μm, the leakage current is greatly reduced down to 1 μA/mm at a bias voltage of 1000 V.

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Section: -5mentioning

confidence: 96%

Off-state electrical breakdown of AlGaN/GaN/Ga(Al)N HEMT heterostructure grown on Si(111)

Zhou

Gao

et al. 2016

AIP Advances

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“…高温LPCVD技术不仅可以用来制备高质量的钝化介质, 也是制备高绝缘氮化物栅介质(如SiNx)的良好方法 [33,[44][45][46][47] . 如图22所示, LPCVD-SiNx与GaN间的导带带阶为2.75 eV, 而且自身的击穿场强达到13 MV/cm [47] , 显著高于PECVD-SiNx栅介质, 因此LPCVD-SiNx栅介质适合制备高压GaN基MIS-HEMT器件, 可进一步扩展栅极的安全阈值范围.…”

Section: Lpcvd-sinx栅介质技术及可靠性unclassified

Device physics towards high performance GaN-based power electronics

Huang

Yang

Tang

et al. 2016

Sci. Sin.-Phys. Mech. Astron.

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“…Gate leakage current and current collapse are the main issues that limit the performance of AlGaN/GaN high-electron-mobility transistors (HEMTs). To overcome these problems, different dielectric materials have been proposed for the fabrication of metal-insulator-semiconductor (MIS) HEMTs, such as SiO 2 [2][3][4][5][6], SiN x [7][8][9][10][11], SiONe [12][13][14], ZrO 2 [15], Al 2 O 3 [16][17][18], and HfO 2 [19], etc. Each material has advantages and disadvantages.…”

Section: Introductionmentioning

confidence: 99%

AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer

et al. 2018

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Three different insulator layers SiNx, SiON, and SiO2 were used as a gate dielectric and passivation layer in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMT). The SiNx, SiON, and SiO2 were deposited by a plasma-enhanced chemical vapor deposition (PECVD) system. Great differences in the gate leakage current, breakdown voltage, interface traps, and current collapse were observed. The SiON MIS-HEMT exhibited the highest breakdown voltage and Ion/Ioff ratio. The SiNx MIS-HEMT performed well in current collapse but exhibited the highest gate leakage current density. The SiO2 MIS-HEMT possessed the lowest gate leakage current density but suffered from the early breakdown of the metal–insulator–semiconductor (MIS) diode. As for interface traps, the SiNx MIS-HEMT has the largest shallow trap density and the lowest deep trap density. The SiO2 MIS-HEMT has the largest deep trap density. The factors causing current collapse were confirmed by Photoluminescence (PL) spectra. Based on the direct current (DC) characteristics, SiNx and SiON both have advantages and disadvantages.

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Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si₃N₄as Gate Dielectric and Passivation Layer

Cited by 105 publications

References 24 publications

Off-state electrical breakdown of AlGaN/GaN/Ga(Al)N HEMT heterostructure grown on Si(111)

Off-state electrical breakdown of AlGaN/GaN/Ga(Al)N HEMT heterostructure grown on Si(111)

Device physics towards high performance GaN-based power electronics

AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer

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Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si3N4as Gate Dielectric and Passivation Layer

Cited by 105 publications

References 24 publications

Off-state electrical breakdown of AlGaN/GaN/Ga(Al)N HEMT heterostructure grown on Si(111)

Off-state electrical breakdown of AlGaN/GaN/Ga(Al)N HEMT heterostructure grown on Si(111)

Device physics towards high performance GaN-based power electronics

AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer

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Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si₃N₄as Gate Dielectric and Passivation Layer