Studies on CdSxSe1−x films prepared by two-zone hot wall technique

Abstract

Polycrystalline thin films of CdSxSe1−x (0 < x < 0.8) are prepared by co‐evaporating CdS and CdSe from a two‐zone evaporation source. The films are characterised by measuring optical and electrical properties. Information on the microstructures are obtained from XRD and TEM/SEM measurements. Raman shifts in the films with composition are also reported. Information on the scattering mechanism is derived from the thermoelectric power measurements. Grain boundary scattering effects in these films are also studied critically.

Studies on structural, optical, and photoelectric properties of CdS1-xSexfilms fabricated by selenization of chemical bath deposited CdS films

“…The ratio of photo to dark conductivity is also an important parameter for the photosensitive films. In the earlier studies , researchers found that for polycrystalline CdS x Se 1– x films, the electrical conductivity was mainly governed by the barrier height at the grain boundary region. The barrier height could be sharply decreased with increasing intensity of the incident light, which will cause an increment in electrical conductivity.…”