Studies of the Ti-W/Au metallization on aluminum

Nowicki, Ronald S.; Harris, J. M.; Nicolet, M.‐A.; Mitchell, I.V.

doi:10.1016/0040-6090(78)90035-4

Cited by 87 publications

(12 citation statements)

References 15 publications

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“…This resulted in a deposition race of about 25 run/minute for both materials. The RF diode sputtered titanium-tungsten and gold system referred to below was deposited as described in a previous publication (4). Prior to the deposition of each film, the substrates were sputter etched at 1 kW for one minute for the purpose of removing `native' oxides.…”

Section: Methodsmentioning

confidence: 99%

Diffusion barriers between gold and semiconductors

Nowicki

1982

Gold Bull

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The effectiveness of a number ofsemiconductor devices depends on the efficiency with which interdiffusion between the semiconductor and metals, which must be applied to it either as contacts or conductive ijietallizations, can be blocked. Comparisons of the characteristics of the diffusion hamers which can be used between gold and semiconductors -such as those which are made here -therefore have considerable significance.

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Section: Methodsmentioning

confidence: 99%

Diffusion barriers between gold and semiconductors

Nowicki

1982

Gold Bull

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“…Highly specific and selective etchants would be required. TiW is a commonly used barrier in many IC applications and as early as 1978, it was reported to effectively prevent interaction between Al and Au [5]. There are several useful wet etchants available for this material based on Ti or W, so that different process options for patterning are possible here [6].…”

Section: Development Of a High Reliability Metallization For The Chipmentioning

confidence: 99%

“…There are several useful wet etchants available for this material based on Ti or W, so that different process options for patterning are possible here [6]. "Stuffing" nitrogen into TiW results in considerable improvement in barrier properties [5]. Films of Ti (20 percent) WN were deposited, but control of the nitrogen content was problematical and no effective wet etchant is known.…”

Section: Development Of a High Reliability Metallization For The Chipmentioning

confidence: 99%

ChipSeal Inorganic Sealing Technology for Hermetic-Like Integrated Circuits. Volume 1

Camilletti¹,

Loboda²,

McCoy³

2000

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“…W-Ti alloys have significant properties from technological point of view such as thermal stability, low electrical resistance, chemical inertness, oxidation resistance and good adhesion towards metal contact and the substrate [1][2][3][4]. These alloys are widely used in various fields: protective materials -anticorrosion and oxidation resistant application, microelectronics-diffusion barrier layer between Al, Cu or Ag contact layers and a silicon substrate, functional coating such as smart windows and gas sensors for detection of pollutants, such as CO, NO 2 and SO 2 [5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%