2006
DOI: 10.1295/polymj.pj2005186
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Studies of Novel Copolymers for Deep-UV Photoresists. I. Synthesis and Properties of Poly(Styrene-co-Silicon-containing maleimide)

Abstract: ABSTRACT:Soluble copolymers of trimethyl (4-(N-maleimido) phenoxy) silane (TMMS) with styrene-series monomers were synthesized by radical polymerization in toluene at 70 C using 2, 2 0 -azobisisobutyronitrile (AIBN)as initiator. The comonomer reactivity ratios were calculated by the conventional Fineman-Ross and Kelen-Tüdos methods and a nonlinear least-squares Tidwell-Mortimer method. The glass transition temperatures (T g s) and thermal degradation of copolymers were determined by differential scanning calor… Show more

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Cited by 3 publications
(3 citation statements)
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“…The copolymerization behavior of truly alternating styrenemaleic anhydride copolymer has already been reported by many researchers [23][24][25][26]. But, the silicon-containing AM systems are still rarely seen in literature [27,28].…”
Section: Introductionmentioning
confidence: 94%
“…The copolymerization behavior of truly alternating styrenemaleic anhydride copolymer has already been reported by many researchers [23][24][25][26]. But, the silicon-containing AM systems are still rarely seen in literature [27,28].…”
Section: Introductionmentioning
confidence: 94%
“…Another example has been shown by Shu et al. [ 13 ] Silicon containing poly(styrene‐ co ‐ N ‐maleimide) copolymers were synthesized by radical polymerization and their structure, and thermal properties were studied for chemically amplified DUV photoresist applications.…”
Section: Introductionmentioning
confidence: 99%
“…[11] The resulting positive tone photoresists showed good thermal stability as well as good adhesion on a silicon substrate while patterns of 0.8 μm could be obtained. Another example has been shown by Shu et al [13] Silicon containing poly(styrene-co-N-maleimide) copolymers were synthesized by radical polymerization and their structure, and thermal properties were studied for chemically amplified DUV photoresist applications.…”
Section: Introductionmentioning
confidence: 99%