STRUCTURE AND OPTICAL PROPERTIES OF <font>InN</font> THIN FILM GROWN ON <font>SiC</font> BY REACTIVE RF MAGNETRON SPUTTERING

Amirhoseiny, M.; Hassan, Z.; Ng, Sha Shiong; Alahyarizadeh, Gh.

doi:10.1142/s0218625x1350008x

Cited by 15 publications

(9 citation statements)

References 21 publications

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“…This shift may come from the remaining strain deforms in the crystal unit cell causing the di®erences in peak energy value of IR absorption bands. 12 Figure 3 shows the XRD pattern of InN NPs drop casts on a slit of glass as a substrate with 80 mJ and 100 mJ at a constant laser ablation time (5 min). Peaks appeared at 2 ¼ 32:95 , 39.15 and 54.4 corresponding to the cubic phase of InN as a re°ection from (101), (110) and (220) planes, respectively.…”

Section: Methodsmentioning

confidence: 99%

Indium Nitride Nanoparticles Prepared by Laser Ablation in Liquid

Khashan

Abbas

2019

Int. J. Nanosci.

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Indium nitride InN nanoparticles NPs suspension prepared by Nd:YAG laser ablation of indium target submerged under ammonium hydroxide. The Scanning electron microscopy, X-ray diffraction, Fourier transform infrared spectroscopy, UV/VIS/NIR spectrophotometer and Conductivity meter were used to determine the properties of the nanoparticles prepared with different laser conditions. Fourier transform infrared spectra exhibit the presence of In[Formula: see text]N and In–N bonds, which indicates the formation of InN particles. X-ray diffraction pattern observed in the formation of InN NPs with cubic phase, the average diameters of the dominant peak c-InN (101) were approximately 2[Formula: see text]nm. Scanning electron microscopy image shows the presence of a large number of spherical shape nanoparticles having a particle size in the range 2–40[Formula: see text]nm with a few individual nanoparticles larger than 128[Formula: see text]nm. The transmission spectra of InN NPs suspension have the maximum optical transmission edge at 1378[Formula: see text]nm with bandgap energy was 0.85–1.2[Formula: see text]eV. InN has high electrical conductivity that depends on temperature value with small activation energy at room temperature ranging from 0.0318[Formula: see text]meV to 0.1591[Formula: see text]meV.

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Section: Methodsmentioning

confidence: 99%

Indium Nitride Nanoparticles Prepared by Laser Ablation in Liquid

Khashan

Abbas

2019

Int. J. Nanosci.

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“…13 Alternative N precursors, such as dimethylhydrazine and tertiarybuthylhydrazine, has been shown ineffective for the growth of InN. 14 More reactive N species can be accessed by using a plasma-assisted approach, which has been adapted in various growth techniques, such as molecule beam epitaxy, 15,16,17 sputtering 18 and metalorganic CVD 19 for the growth of InN.…”

Section: Introductionmentioning

confidence: 99%

On the dynamics in chemical vapor deposition of InN

Pedersen

Hsu

Deminskyi

et al. 2021

Preprint

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Epitaxial, nanometer-thin indium nitride (InN) films are considered as promising active layers in various device applications but remains challenging to deposit. We compare the morphological evolution and characterizations of InN films with various growth conditions in chemical vapor deposition (CVD), by both a plasma atomic layer deposition (ALD) approach and a conventional metalorganic CVD approach. Our results, and previous literature, show that a time-resolved precursor supply is highly beneficial for deposition of smooth and continuous InN nanometer-thin films. We show that the time for purging the reactor between the precursor pulses and low deposition temperature are key factors to achieve homogeneous InN. Our study suggests that 320 °C is the upper temperature where the dynamics of the deposition chemistry can be controlled to involve only surface reactions with surface species. The results highlight the promising role of the ALD technique in realizing electronic devices based on nanometer-thin InN layers.

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“…[6][7][8][9] The electrochemical wet etching of Si in controlled conditions results in the formation of nanocrystalline Si where the quantum confinement of photoexcited carriers proceeds at an increased radiative transition rate and a band gap opening. 10 It is well known that several factors must be taken into account to produce a good device.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of InN based photodetector using porous silicon buffer layer

Amirhoseiny

Hassan

2013

Surface Engineering

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We fabricated indium nitride (InN) on porous silicon (PSi) on crystalline silicon [Si(100)] heterostructure photodetector via radio frequency sputtering. PSi layer was synthesised on n type Si(100) wafers via photoelectrochemical etching. Large area PSi, which comprised an array of voids, was used as an intermediate layer between Si and InN thin film. X-ray diffraction results revealed that nanocrystalline wurtzite structure of InN thin film with preferred orientations of InN (101) was deposited on PSi/Si(100) substrate. Nickel Schottky contact was fabricated on InN thin films via thermal vacuum evaporation using a metal semiconductor metal mask. To relieve stress and to induce any favourable reactions between the metals and the semiconductors, the InN photodetector was annealed in an N 2 environment. Current-voltage measurements after heat treatment at 400uC were performed in the dark and illuminated conditions.

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STRUCTURE AND OPTICAL PROPERTIES OF InN THIN FILM GROWN ON SiC BY REACTIVE RF MAGNETRON SPUTTERING

Cited by 15 publications

References 21 publications

Indium Nitride Nanoparticles Prepared by Laser Ablation in Liquid

Indium Nitride Nanoparticles Prepared by Laser Ablation in Liquid

On the dynamics in chemical vapor deposition of InN

Fabrication of InN based photodetector using porous silicon buffer layer

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