2005
DOI: 10.1016/j.materresbull.2005.04.007
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Structural properties of indium tin oxide thin films prepared for application in solar cells

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Cited by 50 publications
(16 citation statements)
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“…Tin doped indium oxide (ITO) thin films are highly degenerated, wide-gap semiconductors with good conductivity and high optical transmission across the visible spectrum [1][2][3][4]. Recently, there has been considerable interest in the use of ITO films deposited on polymer substrates for applications such as flexible display devices due to the fact that they are lightweight and flexible compared to ITO films prepared on glass substrates.…”
Section: Introductionmentioning
confidence: 99%
“…Tin doped indium oxide (ITO) thin films are highly degenerated, wide-gap semiconductors with good conductivity and high optical transmission across the visible spectrum [1][2][3][4]. Recently, there has been considerable interest in the use of ITO films deposited on polymer substrates for applications such as flexible display devices due to the fact that they are lightweight and flexible compared to ITO films prepared on glass substrates.…”
Section: Introductionmentioning
confidence: 99%
“…The low thermal resistance of plastics is one of the major drawbacks to obtain good quality semiconductor thin films, because the deposition process must be restricted to low substrate temperatures. Several papers in literature report about the properties of ITO films deposited on glass substrates at low temperature [4][5][6][7][8]. The relative high electrical resistivity of those as-deposited ITO films was improved after annealing at temperatures above 200°C.…”
Section: Introductionmentioning
confidence: 99%
“…Most groups use transparent conducting oxide of indium tin oxide (ITO) as front contact. Indium tin oxide (ITO) is an n-type semiconductor with a band gap of 3.5 eV and electron affinity of 4eV [5][6][7][8][9][10][11][12][13][14]. Generally the contact between metal and semiconductor can behave ohmic if the schottky barrier height is zero or even smaller.Usually the work function of metals are smaller than 5eV, so the main issue is to choose and design a contacting system which have lower resistance and behave ohmic [15].…”
Section: Introductionmentioning
confidence: 99%