Structural, dielectric, and ferroelectric properties of Na0.5(Bi1-xNdx)0.5TiO3 ceramics for energy storage and electrocaloric applications

Rational Co-Doping of SrZrO3 and BaTiO3 in Bi0.5Na0.5TiO3 for Extraordinary Energy Storage and Electrocaloric Performances

“…(c, d) Comparison of energy storage density and energy storage efficiency of different BNT-BT5-SZ100 x ceramics at 60 kV/cm. (e) Comparison of EC coefficient (|Δ T |/Δ E ) and ξ (%) ( W rec /Δ E × 100%) achieved in this work and other bulk systems (BNT-based, ,,,– BT-based, – KNN-based, ,, BF-based) reported previously. (f) Directly recorded ECE signal for BNT-BT5-SZ3 ceramics under different electric fields.…”

“…Additionally, in Figure e, we drafted the data points of EC coefficient (|Δ T |/Δ E ) and ξ (%) in this work and other bulk systems. It can be seen that BNT-BT5-SZ5 ceramic has a much higher ξ (1.45% J/(kV cm 2 ) at 30 °C, 1.92% J/(kV cm 2 ) at 120 °C) than those of other lead-free ferroelectric ceramics (ξ are around 0.67–1.98% J/(kV cm 2 ), 0.22–0.68% J/(kV cm 2 ), 0.34–0.57% J/(kV cm 2 ), and 1.16% J/(kV cm 2 ) for Bi 0.5 Na 0.5 TiO 3 (BNT)-based, ,,,− BaTiO 3 (BT)-based, − K 0.5 Na 0.5 NbO 3 (KNN)-based, ,, and BiFeO 3 (BF)-based ceramics, respectively). Therefore, our work provides a new composition, which has a good potential to achieve even higher low-field-induced energy storage density.…”

Influence of the Addition of Rare Earth Elements on the Energy Storage and Optical Properties of Bi0.5Na0.5TiO3–0.06BaTiO3 Polycrystalline Thin Films

“…Capacitors and inductors are typical examples. Recently, a revival of interest is devoted to lead-free dielectric capacitors for electrostatic energy storage [ 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 ]. Attracted by their ultra-fast charging–discharging characteristics combined with their high-power density, the industrial and research communities focus their efforts on chapping environmentally friendly materials able to meet the needs of modern technology [ 12 ].…”

“…However, in the temperature-dependent dielectric permittivity, a shoulder is observed around T d , which is promoted only in the case of substitution or polling, resulting from a mixed contribution from R3c -to- P4bm polar nanoregions transition [ 23 ]. Around this transition, BNT-based materials exhibit double-pinched ferroelectric hysteresis loops [ 2 , 4 , 5 , 23 ]. The origin of this behavior has been widely discussed in the literature [ 24 , 25 ].…”

“…The focus was on how to increase the dielectric breakdown to increase the stored energy, although, the obtained energy remains below expectations for the technological applications. This is why particular interest has been directed toward thin films of these materials in which a high dielectric breakdown field can be reached [ 4 ]. The review of the literature shows that the energy stored in thin films greatly exceeds that of ceramics by many orders of magnitude [ 26 , 27 , 28 ].…”