Structural Characteristics of Porous Silicon

Hussain, Qadeer; nbsp, Arifullah; Naz, Nazir A.; Akbar, Ammar; Ali, Akbar

doi:10.4236/jsemat.2014.42014

Cited by 4 publications

(3 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure 3b reveals the broad diffraction peaks which implies the formation of a macro-porous layer with a small broadening peak near 32.925°and the splitting of the peak of the porous silicon layer. The mPS crystallographic orientation belongs to the (211) orientation at 2θ = 33.3°, 45,46 and this indicates that the crystalline nature of the silicon pores, while the peaks at 69.2°in crystal position of (422) correspond to the bare crystalline silicon (c-Si) substrate remaining amongst the pores. 47 Figure 3c reveals the peaks of ZnO/mPS structures and it shows considerably small appearance of mPS peaks at (211) as the nanostructures adsorbed onto mPS and not-fully covered the pores surface.…”

Section: Resultsmentioning

confidence: 99%

Incorporation of Zinc Oxide on Macroporous Silicon Enhanced the Sensitivity of Macroporous Silicon MSM Photodetector

Rosli

Halim

Chahrour

et al. 2020

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

In this study, metal-semiconductor-metal (MSM) photodetectors (PDs) was fabricated on the macroporous silicon substrate, (mPS) followed by growth of zinc oxide (ZnO) on the mPS substrate (ZnO/mPS) with addition of nickel (Ni) contact in finger mask pattern. The mPS was formed by electrochemical etching technique with an estimated etching time of 15 min by a continuous current flow of 25 mA. The ZnO nanostructures were synthesized by cost-effective chemical bath deposition (CBD) process. Field Effect Scanning Electron Microscopy (FESEM) and X-ray Diffractometer (XRD) revealed the randomly distributed of upper-morphologies and crystalline properties of x-shaped mPS as well as the distribution of ZnO/mPS. A good Schottky contact with superior photoconductivity, photo-responsivity, and photo-sensitivity have been demonstrated from these MSM PDs under illumination of 383 nm and 422 nm light sources. An enhanced photoconductivity at 422 nm had been demonstrated from Ni/ZnO/mPS/Ni PD which was believed due to the incorporation of energy properties at ZnO/mPS interface with a greater energy band gap of 3.15 eV. The responsivity of Ni/mPS/Ni PD at 383 nm and 422 nm were 0.088 A W−1 and 0.171 A W−1, respectively. While the Ni/ZnO/mPS/Ni PD shows the double photo-responsivity for both wavelengths, with the values of 0.160 A W−1 and 0.385 A W−1, respectively. In overall, the incorporation of ZnO/mPS structure drawn a great significance in PDs performance due to unique tunable photo-responsivity, higher sensitivity, and faster rise and decay time which attributed to the swift recombination process.

show abstract

Section: Resultsmentioning

confidence: 99%

Incorporation of Zinc Oxide on Macroporous Silicon Enhanced the Sensitivity of Macroporous Silicon MSM Photodetector

Rosli

Halim

Chahrour

et al. 2020

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…7 (d) SiO 2 substrate XRD pattern, the main peak at 69.15° belongs to (100) planes of Si. And the other lower intensity peaks are associated with the silicon oxide species [ 38 ]. Besides, the reflection peak at 33° of pristine SiO 2 substrate in Fig.…”

Section: Resultsmentioning

confidence: 99%

Binder-free TiO2 hydrophilic film covalently coated by microwave treatment

Luo

Wang

Hwang

et al. 2021

Materials Chemistry and Physics

View full text Add to dashboard Cite

A binder-free attachment method for TiO 2 on a substrate has been sought to retain high active photocatalysis. Here, we report a binder-free covalent coating of phase-selectively disordered TiO 2 on a hydroxylated silicon oxide (SiO 2 ) substrate through rapid microwave treatment. We found that Ti–O–Si and Ti–O–Ti bonds were formed through a condensation reaction between the hydroxyl groups of the disordered TiO 2 and Si substrate, and the disordered TiO 2 nanoparticles themselves, respectively. This covalent coating approach can steadily hold the active photocatalytic materials on the substrates and provide long-term stability. The binder-free disordered TiO 2 coating film can have a thickness (above 38 μm) with high surface integrity with a strong adhesion force (15.2 N) against the SiO 2 substrate, which leads to the production of a rigid and stable TiO 2 film. This microwave treated TiO 2 coating film showed significant volatile organic compounds degradation abilities under visible light irradiation. The microwave coated selectively reduced TiO 2 realized around 75% acetaldehyde degradation within 12 h and almost 90% toluene degradation after 9 h, also retains stable photodegradation performance during the cycling test. Thus, the microwave coating approach allowed the preparation of the binder-free TiO 2 film as a scalable and cost-effective method to manufacture the TiO 2 film that shows an excellent coating quality and strengthens the application as a photocatalyst under severe conditions.

show abstract

“…XRD pattern, Figure (1) for etched sample shows diffraction style of PS substance manufactured at anodizing current density of 15 mA/cm 2 at 10 min anodizing times. The reflections XRD beam from (100) planes appear two peaks: the first high intensity peak at 2θ = 68.95° from crystal silicon (100) planes, and the second weak intensity peak at 2θ = 69.15° Web Site: https://jutq.utq.edu.iq/index.php/main Email: journal@jutq.utq.edu.iq from PS [17]. The peak in the crystal silicon spectrum is more intense than in the PS spectrum, indicating that the structure crystal silicon contains a crystalline phase [18].…”

Section: Structural Propertiesmentioning

confidence: 99%

Study of Dielectric properties for porous silicon prepared by Anodization

Ulaziz

2019

University of Thi-Qar Journal

View full text Add to dashboard Cite

The nanostructure for porous silicon (PS) films is produced by anodization of p-type silicon chip with current consistency (15 mA/cm 2 ), etching time about 10 min and HF concentration (32%) to the formation nanosized pore order with a dimension of around few hundreds nanometric. The films were featured by the measurement of atomic force microscopy (AFM) in the Baghdad university, X-Ray diffraction (XRD) and FTIR spectroscopy characteristics in the technological university. I am having appraising crystallites size from XRD about nanoscale for porous silicon and AFM proves the nanometric size.Chemical fictionalizations through the electrochemical etching clear on superficies chemical structure of PS. The etching possess disproportionate microstructures that include Si-H clusters in (Si 3 -SiH), sparse in amorphous silica matrix and Si-H 2 scissor mode. From the FTIR testing appeared that the Si suspending bonds of the as-produced PS layer have massive quantities of Hydrogen to form weak Si-H bonds related to Si-H stretch (Si 3 -SiH) and Si-H stretch (Si 2 -SiH).The AC electrical properties were measured with LCR meter analyzer the frequency between 50 Hz and 5 MHz. for capacitance, dielectric and loss tangent (tan δ D ) to balk silicon and porous silicon have been done in the ministry of science and technology.

show abstract

Structural Characteristics of Porous Silicon

Cited by 4 publications

References 11 publications

Incorporation of Zinc Oxide on Macroporous Silicon Enhanced the Sensitivity of Macroporous Silicon MSM Photodetector

Incorporation of Zinc Oxide on Macroporous Silicon Enhanced the Sensitivity of Macroporous Silicon MSM Photodetector

Binder-free TiO2 hydrophilic film covalently coated by microwave treatment

Study of Dielectric properties for porous silicon prepared by Anodization

Contact Info

Product

Resources

About