Photovoltaic effect in ferroelectrics
can be considered as a sum
of two dominant contributions, that is, arising from the ferroelectric/metal
junctions and from the bulk of the ferroelectrics. In the case of
Pb(Zr0.2Ti0.8)O3, several studies
have been devoted to analyze the contributions from the junctions
and associated aspects such as barrier height. In this work, we elaborate
on the contribution from the bulk, and the role of an inherent nano-sized
entity, that is, domain walls. Systematic investigations were conducted
with samples of different thicknesses (75–700 nm), which evidently
also assisted in varying the proportion of domain walls. The open-circuit
voltages scaled up with thickness in accordance with the bulk-driven
photovoltaics phenomenology. Temperature-resolved measurements highlighted
the influence of domain walls on the overall transport characteristics
under light and dark conditions. Analysis of the spectral photoresponse
unraveled the sub-band gap character of the domain walls and the prospective
role in the overall photovoltaic effect.