Structural and optical properties of thin films porous amorphous silicon carbide formed by Ag-assisted photochemical etching

Boukezzata, A.; Keffous, A.; Cheriet, A.; Belkacem, Y.; Gabouze, N.; Manseri, A.; Nezzal, G.; Kechouane, M.; Bright, A. A.; Guerbous, L.; Menari, H.

doi:10.1016/j.apsusc.2010.03.037

Cited by 13 publications

(8 citation statements)

References 9 publications

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“…The SiC etching mechanism proposed by Shor and Kurtz 16 has been generally accepted. 13,[17][18][19][20][21][22][23] According to their hypothesis, anodic etching of SiC in aqueous HF occurs in two steps: oxidation of SiC and dissolution of the formed oxide. They suggested that oxidation of SiC occurs via the following reactions: 16 SiC…”

Section: Methodsmentioning

confidence: 99%

Influence of the anodic etching current density on the morphology of the porous SiC layer

Cao¹,

Luong

Dao

2014

AIP Advances

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In this report, we fabricated a porous layer in amorphous SiC thin films by using constant-current anodic etching in an electrolyte of aqueous diluted hydrofluoric acid. The morphology of the porous amorphous SiC layer changed as the anodic current density changed: At low current density, the porous layer had a low pore density and consisted of small pores that branched downward. At moderate current density, the pore size and depth increased, and the pores grew perpendicular to the surface, creating a columnar pore structure. At high current density, the porous structure remained perpendicular, the pore size increased, and the pore depth decreased. We explained the changes in pore size and depth at high current density by the growth of a silicon oxide layer during etching at the tips of the pores.

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Section: Methodsmentioning

confidence: 99%

Influence of the anodic etching current density on the morphology of the porous SiC layer

Cao¹,

Luong

Dao

2014

AIP Advances

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“…Infrared spectroscopy (FT-IR) revealed that the intensity of the peak located at 616 cm À 1 corresponds to Si-C [28], its intensity decreases when the chemical etching time increases, and the band becomes less large after the chemical treatment, as well as to indicate that the Si-C bond is broken to form the oxide of silicon (SiO 2 ) on the surface film at 1106 cm À 1 , indicated by the presence of siloxane group Si-O-Si at 466 cm À 1 . The absorption bands located at 570 cm À 1 and 680 cm À 1 correspond to Si-H bond and SiH 2 , respectively.…”

Section: Infrared Spectroscopy (Ft-ir)mentioning

confidence: 99%

Comparative study of porous amorphous a-Si1−xCx films and a-Si1−xCx membranes on structural and luminescence properties

Boukezzata

Nezzal

Guerbous³

et al. 2011

Journal of Luminescence

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“…UV light is another excitation source, as UV illumination can inject holes into the valence band of SiC, which subsequently participate in the oxidation and dissolution of the substrate. However, as the holes are randomly distributed in the SiC, only porous structures can be obtained . Laser is also used to directly drill SiC or oxidize SiC, which is then followed by etching in KOH or HF; however, due to the intrinsic energy decay, the side wall quality of the etched structure is poor and taper angle inevitably exists.…”

Section: Introductionmentioning

confidence: 99%

Hybrid Anodic and Metal‐Assisted Chemical Etching Method Enabling Fabrication of Silicon Carbide Nanowires

Chen

Zhang

et al. 2019

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Silicon carbide (SiC) is widely considered as the third-generation semiconductor material due to its wide band gap, superior chemical inertness, electrical and mechanical properties (high breakdown electric field (3e6 V cm −1 ), and high electron saturationSilicon carbide (SiC) is one of the most important third-generation semiconductor materials. However, the chemical robustness of SiC makes it very difficult to process, and only very limited methods are available to fabricate nanostructures on SiC. In this work, a hybrid anodic and metalassisted chemical etching (MACE) method is proposed to fabricate SiC nanowires based on wet etching approaches at room temperature and under atmospheric pressure. Through investigations of the etching mechanism and optimal etching conditions, it is found that the metal component plays at least two key roles in the process, i.e., acting as a catalyst to produce hole carriers and introducing band bending in SiC to accumulate sufficient holes for etching. Through the combined anodic and MACE process the required electrical bias is greatly lowered (3.5 V for etching SiC and 7.5 V for creating SiC nanowires) while enhancing the etching efficiency. Furthermore, it is demonstrated that by tuning the etching electrical bias and time, various nanostructures can be obtained and the diameters of the obtained pores and nanowires can range from tens to hundreds of nanometers. This facile method may provide a feasible and economical way to fabricate SiC nanowires and nanostructures for broad applications.

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Structural and optical properties of thin films porous amorphous silicon carbide formed by Ag-assisted photochemical etching

Cited by 13 publications

References 9 publications

Influence of the anodic etching current density on the morphology of the porous SiC layer

Influence of the anodic etching current density on the morphology of the porous SiC layer

Comparative study of porous amorphous a-Si1−xCx films and a-Si1−xCx membranes on structural and luminescence properties

Hybrid Anodic and Metal‐Assisted Chemical Etching Method Enabling Fabrication of Silicon Carbide Nanowires

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