We report the analysis of Urbach energy and Tauc parameter in GeSe 2 thin films deposited by vacuum evaporation technique. Amorphous to crystalline transformation takes place after annealing at 300°C. Optical absorption is an indirect transition and the energy gap increases with increase in temperature upto 300°C and then decreases with further increase of temperature. A blue shift and red shift in optical transmittance edges are observed in annealed GeSe 2 thin films. The obtained lower values of Urbach energy and higher value of Tauc parameter indicates that the film annealed at 300°C is more ordered.