Structural and optical properties of SbxSey thin films obtained by chemical molecular beam deposition method from Sb and Se precursors

Properties of Single Crystal Silicon Doped with Vanadium

“…The authors assume that the resistivity ρ of deep layers of the surface area of the resulting structure does not change sharply, and secondly, it is characterized by an almost flat distribution of resistivity ρ across the bulk of the silicon sample [7][8].…”

“…The concentration of the optically active oxygen atom is No opt ≈9•10 17 cm -3 and the carbon concentration N c opt ≈7.3•10 17 cm -3 , according to IR-absorption spectra at 1100 cm -1 (oxygen band area) and 610 cm -1 (carbon band area). Infrared absorption spectrum at 300 K according to a two-beam scheme, infrared spectra FSM-2201 operating in the range 370÷7800 cm -1 a spectrometer was used to determine the optically active oxygen (N 0 opt ) carbon (N c opt ) at room temperature [7][8][9][10][11]. IR-absorption spectra were measured for oxygen at 1106 cm -1 (9.1 μm) (Fig.…”

A Review on the Fundamental Properties of Sb2Se3-Based Thin Film Solar Cells

“…Regarding the nature of the optical bandgap, some authors have reported that only direct transitions are seen at room temperature [82,84,87,90,91], while others state that only indirect transitions are observed [83,[92][93][94] and still others claim that both are detected [81,95,96]. This ambiguity will remain due to the Sb 2 Se 3 electronic band structure.…”

“…Razykov et al deposited crystalline Sb 2 Se 3 thin films by chemical molecular beam deposition, achieving large grain sizes, and they found that a lower content of Se increases the bandgap from 1.09 to 1.17 eV, passing from 0.85 to 0.66 of the Sb/Se ratio [90]. This bandgap increase after selenization has been reported also by others [56], and for amorphous films, the energy gap has been reported to follow a Vegard-type law with different Se content [95].…”

Optical loss analysis of Sb2S3 and Sb2Se3 thin film solar cells: A Quantitative Assessment

“…Even though both perovskite [4] and antimony chalcogenides have emerged as captivating materials for photovoltaic applications in the last 5 years [5], however, perovskite solar cells suffer from moisture instability which is hindering their upscaling and commercialization [6,7]. The V-VI semiconductor compounds, namely Sb 2 S 3 and Sb 2 Se 3 exhibit remarkable optical and electrical characteristics such as high absorption coefficient (>10 5 cm −1 ), the ability to tune their bandgap within the range of 1.04-1.67 eV, intrinsic p-type conductivity, attired carrier mobility (9-15 cm 2 /V.s), and desirable attributes such as moisture stability [8,9]. Additionally, these materials offer other significant advantages, including their abundance on earth, simplified structural composition, minimal presence of secondary phases, or smaller melting points [10].…”