Structural and optical characteristics of bismuth oxide thin films

Leontie, Liviu; Caraman, Mihail; Alexe, Marin; Harnagea, Cătălin

doi:10.1016/s0039-6028(02)01289-x

Cited by 264 publications

(135 citation statements)

References 21 publications

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“…The oxygen atoms from atmosphere can react with the bismuth atoms on the sample surface, however it is not possible to oxidise in such way Bi inside the system. On the other hand, some papers [11,12] report that bismuth can attach the oxygen atoms effectively only in temperature above 700 K. In our case the samples were kept always at room temperature, so we suspect air cannot be the only source of oxygen in the vicinity of Bi.…”

Section: Resultsmentioning

confidence: 63%

XAFS Studies of the Behaviour of Bi in Co/Cu Multilayers

et al. 2009

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The atomic environment of Bi atoms in the Co/Cu multilayered system was studied with X-ray absorption fine structure spectroscopy. Experiments were carried out on a Co(1 nm)/Cu(2 nm) system with 5 and 10 repetitions of Co/Cu evaporated with very low deposition rate in ultrahigh vacuum. A very small amount of Bi (0.06 nm) was deposited on each Cu film in the system. The X-ray absorption fine structure spectra were measured at the BiL 3 edge in the X-ray absorption near-edge structure and extended X-ray absorption fine structure ranges at the Beamline X1 of HASYLAB/DESY synchrotron laboratory in Hamburg. The experimental data showed different local neighbourhood of Bi, depending on the number of Co/Cu bilayer repetitions. The results are discussed in terms of the location and segregation of the Bi atoms as well as its possible oxidation ways.

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Section: Resultsmentioning

confidence: 63%

XAFS Studies of the Behaviour of Bi in Co/Cu Multilayers

et al. 2009

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“…AFM topography of as-deposited Bi thin films did not reveal any porous films and the average height of extended needles was 100 nm. Substrate temperature effect on the roughness of Bi thin films was also studied; with an increase in substrate temperature the films became more uniform as the roughness of the films decreased [28]. Among the three different substrate temperatures, the films deposited at 430°C had the smoothest surface with the rms (root mean square) value of 22.9 nm as shown in Fig.…”

Section: Surface Morphologymentioning

confidence: 98%

Catalyst free growth of single-crystalline bismuth nanorods by closed space sublimation technique

Usman

Maqsood

2015

Materials Science-Poland

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In the present study, bismuth (Bi) thin films having thickness of 335 nm have been deposited onto a glass substrate by closed space sublimation (CSS) technique. Besides this, spontaneous growth of Bi nanorods has also been investigated for the first time, without template and catalyst assistance in a substrate temperature range of 380 to 430°C using CSS technique. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were employed to investigate microstructure, morphology and roughness of the Bi nanorods. The diameter and length ranges of Bi nanorods were 80 to 400 nm and 3 to 5 µm, respectively. Moreover, they exhibited a rhombohedral structure with a dominant peak indexed at (012), (104), and (110). The mass percentage of Bi, determined by energy dispersive X-ray (EDX), was 99.93 %. The studies of electrical resistivity, Hall coefficient, magnetoresistivity, hole mobility and carrier concentration of Bi thin films were performed at 300 to 350 K and the electrical properties were found to be a function of temperature. The basic aim was to investigate the spectacular evolution of Bi nanostructures on as-deposited thin films and effects of thickness on their structural, electrical and dielectric properties. Detailed examination of SEM micrographs eliminated all other growth modes except self-catalytic tip growth by Vapor-Solid (VS) growth process which is believed to provide the driving force for spontaneous nanorod growth at high substrate temperature. Deposition of thinner Bi films provided a new possibility for fabrication of Bi nanorods of high quality.

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“…Until now, five polymorphic forms of bismuth oxides were obtained: two stable polymorphs, namely α and δ phases (α-Bi 2 O 3 is monoclinic, δ-Bi 2 O 3 is face-centered cubic), and three metastable phases, i.e. β, γ and ω (β-Bi 2 O 3 is tetragonal, γ-Bi 2 O 3 is body-centered cubic, ω-Bi 2 O 3 is triclinic) [5][6][7][8][9][10][11][12][13]35]. For nanometric thicknesses, BiO is predominant phase, while in case of micronic films, α-Bi 2 O 3 and Bi 2 O 3 are the main phase components [11].…”

Section: Introductionmentioning

confidence: 99%

Synthesis, surface tension, optical and dielectric properties of bismuth oxide thin film

Tezel

Kariper

2017

Materials Science-Poland

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Bismuth oxide thin film was deposited by chemical bath deposition (CBD) technique onto a glass substrate. The grain size (D), dislocation density (δ) and number of crystallites per unit area (N), i.e. structural properties of the thin film were determined as 16 nm, 39.06 × 10 −4 line/nm 2 , 31.25 × 10 −3 1/nm 2 , respectively. Optical transmittance properties of the thin film were investigated by using a UV-Vis spectrophotometer. The optical band gap (E g ) for direct transitions, optical transmission (T %), reflectivity (R %), absorption, refractive index (n r ), extinction coefficient (k), dielectric constant ( ) of the thin film were found to be 3.77 eV, 25.23 %, 32.25 %, 0.59, 3.62, 0.04 and 2.80, respectively. The thickness of the film was measured by AFM, and was found to be 128 nm. Contact angles of various liquids on the oxide thin film were determined by Zisman method, and surface tension was calculated to be 31.95 mN/m.

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Structural and optical characteristics of bismuth oxide thin films

Cited by 264 publications

References 21 publications

XAFS Studies of the Behaviour of Bi in Co/Cu Multilayers

XAFS Studies of the Behaviour of Bi in Co/Cu Multilayers

Catalyst free growth of single-crystalline bismuth nanorods by closed space sublimation technique

Synthesis, surface tension, optical and dielectric properties of bismuth oxide thin film

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