Structural and morphological properties of ITO thin films grown by magnetron sputtering

Ghorannevis, Zohreh; Akbarnejad, E.; Ghoranneviss, M.

doi:10.1007/s40094-015-0187-3

Cited by 59 publications

(43 citation statements)

References 27 publications

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“…So the surface carrier density improvement through electron doping from ITO and the carrier mobility improvement from graphene facilitate higher conductivity or lower sheet resistance to bi-film, when compared with the individual ITO. ITO film obtained from this study reveals high surface root mean squared (RMS) roughness of about 14.398 nm and mean roughness of 12.522 nm that comparatively much higher than reported roughness values of ITO from other synthesis method such as radiofrequency (RF) magnetron sputtering 57 – 59 . Graphene/ITO bi-film with surface RMS roughness of approximately 9.387 nm and mean roughness of 7.322 nm, indicating that surface roughness of ITO film can reduce by coating graphene on it (see Supplementary Fig.…”

Section: Resultsmentioning

confidence: 51%

Fabrication of highly conductive graphene/ITO transparent bi-film through CVD and organic additives-free sol-gel techniques

Hemasiri

Kim

Lee

2017

Sci Rep

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Indium tin oxide (ITO) still remains as the main candidate for high-performance optoelectronic devices, but there is a vital requirement in the development of sol-gel based synthesizing techniques with regards to green environment and higher conductivity. Graphene/ITO transparent bi-film was synthesized by a two-step process: 10 wt. % tin-doped ITO thin films were produced by an environmentally friendly aqueous sol-gel spin coating technique with economical salts of In(NO3)3.H2O and SnCl4, without using organic additives, on surface free energy enhanced (from 53.826 to 97.698 mJm−2) glass substrate by oxygen plasma treatment, which facilitated void-free continuous ITO film due to high surface wetting. The chemical vapor deposited monolayer graphene was transferred onto the synthesized ITO to enhance its electrical properties and it was capable of reducing sheet resistance over 12% while preserving the bi-film surface smoother. The ITO films contain the In2O3 phase only and exhibit the polycrystalline nature of cubic structure with 14.35 ± 0.5 nm crystallite size. The graphene/ITO bi-film exhibits reproducible optical transparency with 88.66% transmittance at 550 nm wavelength, and electrical conductivity with sheet resistance of 117 Ω/sq which is much lower than that of individual sol-gel derived ITO film.

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Section: Resultsmentioning

confidence: 51%

Fabrication of highly conductive graphene/ITO transparent bi-film through CVD and organic additives-free sol-gel techniques

Hemasiri

Kim

Lee

2017

Sci Rep

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“…Indium tin oxide thin films have potential application as transparent conducting materials for solar cells, optical solar reflectors and panel displays [1-3], because of their well-known physical properties such as low resistivity and high transmittance in the visible wavelength region. The most preferred method of ITO thin films production is sputtering using ITO targets [4,5] due to its good reproducibility and adhesion of the films to the substrates and high deposition rate. ITO targets with 5-10% mass SnO 2 have been usually used for the ITO sputtered thin films with good optoelectronic properties [6].…”

Section: Introductionmentioning

confidence: 99%

Effect of Sputtering Power on Optoelectronic Properties of Iron-Doped Indium Saving Indium-Tin Oxide Thin Films

Ohtsuka¹,

Sergiienko

Petrovska

et al. 2019

Metallofiz. Noveishie Tekhnol.

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Iron-doped indium-tin oxide (ITO) thin films with reduced to 50% mass indium oxide content are deposited onto glass substrates preheated at 523 K by co-sputtering of ITO and Fe 2 O 3 targets in mixed argon-oxygen atmosphere. The influence of different radio frequency (RF) plasma power for deposition of Fe 2 O 3 target on the electrical, optical, structural, and morphological properties of the films is investigated by means of four point probe, Ultraviolet-Visible-Infrared (UV-Vis-IR) spectroscopy, X-ray diffraction and atomic force microscopy methods. The volume resistivity of 930 µΩ⋅cm and transmittance over 85% are obtained for thin films sputtered under optimum conditions. Iron doping results in significant improvement in films transmittance and increasing the crystallization temperature of ITO thin films.

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“…This can lead to increase in the effective charge carrier conduction. Although, the annealed ITO film at this thickness shows better transmittance characteristics at ̴ 96 %, but that comes with an increasing resistivity which is an issue [32,36]. It can be observed in Figure 5, that the transmittance spectra of the annealed IAAI shifted toward shorter wavelength of the spectrum indicating a blue shift in the transmittance.…”

Section: Resultsmentioning

confidence: 86%

Structural optical and electrical properties of transparent conductive ITO/Al-Ag/ITO multilayer contact

Isiyaku¹,

Ali²,

Nayan³

2019

Preprint

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Developing a new design and structure of transparent conductive oxides (TCO) materials to improve performance in optoelectronic devices are important and quite challenging. Microstructural, optical and electrical properties of sandwiched Al-Ag metals interlayer between top and bottom ITO layers (ITO/Al-Ag/ITO) have been investigated. The multilayer ITO/Al-Ag/ITO (IAAI) films were prepared using RF and DC magnetron sputtering method. Post annealing treatment at 400oC was conducted on IAAI and ITO (for reference) films in air. X-ray diffraction measurements show that the insertion of Al-Ag intermediate bilayer led to the crystallization of Ag interlayer even at as-deposited stage. Peaks intensities at ITO (222), Ag (111) and Al (200) crystal plane were observed after annealing treatment, indicating an enhancement in crystallinity of the IAAI film. The post-annealed IAAI film reveals a continuous and smooth surface roughness with improved growth in grain size as examined by atomic force microscopy (AFM) and field emission scanning electron microscopic (FESEM) respectively. Comparing the optoelectronic properties of IAAI film with single ITO film, the annealed IAAI film exhibited a remarkable improvement in optical transmittance (86.1%) with a very low sheet resistance of 2.93 Ω/sq as measured by UV-Vis spectrophotometer and four-point probe method. The carrier concentration increased more than double when Al-Ag layer was inserted between the ITO layers as determined by Hall Effect measurements. The under layer Al film helps to halts the Ag film agglomeration and oxidation which subsequently enhances the stability of IAAI multilayer film. The performance of IAAI contact has been found to be high at 76.4 × 10-3 Ω compares to single ITO (69.4 × 10-3) contact as calculated by the figure of merit (FOM).

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Structural and morphological properties of ITO thin films grown by magnetron sputtering

Cited by 59 publications

References 27 publications

Fabrication of highly conductive graphene/ITO transparent bi-film through CVD and organic additives-free sol-gel techniques

Fabrication of highly conductive graphene/ITO transparent bi-film through CVD and organic additives-free sol-gel techniques

Effect of Sputtering Power on Optoelectronic Properties of Iron-Doped Indium Saving Indium-Tin Oxide Thin Films

Structural optical and electrical properties of transparent conductive ITO/Al-Ag/ITO multilayer contact

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