Structural and Morphological Characteristics of In_xga_1-xN Films Grown on SI (111) by Reactive Magnetron Sputtering

Investigation of GaN/InGaN thin film growth on ITO substrate by thermionic vacuum arc (TVA)

“…The XRD patterns of the InGaN thin films deposited on the ITO substrate exhibited polycrystal structure with three diffraction peaks at 30.30° corresponding to the (100) plane of the InGaN, 33.00° and 36.30° corresponding to the (0002) and (10)(11) planes of the GaN, respectively. Wang et al [39] Some specific properties of the grown films are determined by utilizing the XRD pattern. The particle size of the deposited films was calculated using the Debye-Scherrer formula given at; where K is shape constant, which is 0.94, λ is the X-ray wavelength, θ is the Bragg diffraction angle, and β is the full width at half-maximum (FWHM) of the XRD peak appearing at the diffraction angle.…”

“…With all these advantages, III-Nitride structures are the most suitable materials for fabrication of optoelectronic devices in blue and ultraviolet (UV) spectral regions. It is possible to grow high-quality InGaN epitaxial layers by modern crystal growth techniques such as molecular beam epitaxy (MBE) [7,9,10,13,19,20,23,30], radio frequency sputtering technique (RFSM) [11,14,16,[37][38][39] and metal organic chemical vapor deposition (MOCVD) [3-5, 17, 26, 36, 40]. The method of epitaxial crystal growth with a molecular beam involves the reaction of a thermal beam of atoms or molecules with a crystal surface in a very high vacuum environment.…”

Data‐Driven Cz–Si Scale‐Up under Conditions of Partial Similarity

“…The influence of the mentioned individual parameters on Cz–Si crystal quality has been the focus of extensive experimental and numerical research in the past, e.g.. [ 7,8,11–34 ] Typically, these studies have centered on assessing the effects of the parameter under investigation within the context of specific crystal and/or crucible sizes.…”

N2 Gaz Akiş Hizinin, Sputter Tekni̇ği̇nden Elde Edi̇len İndi̇yum-Galyum-Ni̇trür Üçlü İnce Fi̇lmi̇ni̇n Opti̇k, Yapisal Ve Morfoloji̇k Özelli̇kleri̇ne Etki̇si̇ni̇n İncelenmesi̇

“…Growth of InGaN thin films can be obtained by using several methods such as; molecular beam epitaxy (MBE) [6][7], metal organic chemical vapor deposition (MOCVD) [8][9] and sputtering technique [10][11][12][13][14][15][16]. Sputtering thin film growth technique is basically a process in which after an inert gas (noble gas, usually argon), which is sent between two differently polarized electrodes, is converted into a positive ion, the material is accelerated towards the target material in the cathode (negative electrode) these scraped particles will grow one by one on the base placed exactly opposite the target [17][18].…”