2006
DOI: 10.1002/adfm.200500816
|View full text |Cite
|
Sign up to set email alerts
|

Structural and Electrostatic Complexity at a Pentacene/Insulator Interface

Abstract: The properties of organic‐semiconductor/insulator (O/I) interfaces are critically important to the operation of organic thin‐film transistors (OTFTs) currently being developed for printed flexible electronics. Here we report striking observations of structural defects and correlated electrostatic‐potential variations at the interface between the benchmark organic semiconductor pentacene and a common insulator, silicon dioxide. Using an unconventional mode of lateral force microscopy, we generate high‐contrast … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

8
154
1
1

Year Published

2008
2008
2013
2013

Publication Types

Select...
4
4

Relationship

0
8

Authors

Journals

citations
Cited by 145 publications
(164 citation statements)
references
References 41 publications
8
154
1
1
Order By: Relevance
“…The coalescence process seems not to influence the orientation alignment of merging islands (see arrows in Fig. 5(b)), in agreement with previous findings [27] so that a large number of grain boundaries is present in the first monolayer [33]. The second-layer islands, which cover about 1/5 of the monolayer, show a typical dendritic shape with a mean fractal dimension D f = 1.60 ± 0.06, 1 and most of them are composed of several crystalline domains.…”
Section: Resultssupporting
confidence: 81%
See 1 more Smart Citation
“…The coalescence process seems not to influence the orientation alignment of merging islands (see arrows in Fig. 5(b)), in agreement with previous findings [27] so that a large number of grain boundaries is present in the first monolayer [33]. The second-layer islands, which cover about 1/5 of the monolayer, show a typical dendritic shape with a mean fractal dimension D f = 1.60 ± 0.06, 1 and most of them are composed of several crystalline domains.…”
Section: Resultssupporting
confidence: 81%
“…We also employed AFM to perform transverse shear microscopy (TSM) [25][26][27], where a silicon nitride tip (NP-20 Veeco Metrology and Instrument, USA) with a spring constant of 0.58 N m −1 is scanned in contact parallel to the cantilever's long axis. By mapping the variation in transverse shear force, we could qualitatively determine the crystallinity of a single molecular island or of the whole monolayer.…”
Section: Afm Characterizationmentioning
confidence: 99%
“…It tracks the twisting of the cantilever due to the lateral forces acting perpendicular to the scan vector and can be used to visualise the relative orientation of grains in thin films with high contrast. 19,21,[35][36][37] Fig. 3 shows transverse shear for the different substrate preparations and pentacene deposition conditions, the molecular island count was averaged from five AFM images collected in different regions on each sample.…”
Section: Afm and Tsm Characterisation Of Pentacene Submonolayersmentioning
confidence: 99%
“…50 Finally, TSM has been combined with Kelvin-probe microscopy directly revealing localized surface-potential wells at the grain boundaries indicating that they are likely to serve as charge-carrier traps. 53 …”
Section: Transverse Shear Microscopymentioning
confidence: 99%
“…AFM has become a standard laboratory tool for the characterization of film topography with high resolution. However, as outlined [50][51][52][53][54] has demonstrated the ability to image domain orientation on the desired length scale using a conventional atomic force microscope. In this technique, the twist experienced by the cantilever as it is scanned is monitored via the lateral deflection of the laser beam, depicted schematically in Figure 9(a).…”
Section: Transverse Shear Microscopymentioning
confidence: 99%