Structural and Electro-Physical Properties of ZnO Films, Obtained by a MOCVD Method on Glass and Silicon Substrates

Abstract

This paper reports on the ZnO film structures obtained by MOCVD method from acetylacetonate of zinc and diethyldithiocarbamate of zinc on silicon substrates at 280-320 оС substrate. The structural, emitting and transport properties of the ZnO films were examined by X-ray diffraction, Scanning electronic microscopy, Photoluminescent microscopy and Current-Voltage methods. The electrical transport mechanisms were analyzed on the base of differential and injection approaches. The ZnO/Si structure with ZnO film obtained was found to be appropriate for use in electronic devices due to their structural and electrical properties.

Semiconductor surface spectroscopy using transverse acousto-electric effect: Role of surface charge in photo-processes at the ZnS/Si interface

“…At the same time, it should be noted that it is not possible to attribute the effect of charging the surface to the ZnO states, a sample containing exclusively ZnO (sample No. 207, precursor-zinc acetylacetonate) [22] did not demonstrate any significant TAE response.…”

“…The gap (0.2 µm) between the semiconductor and piezoelectric in the acoustoelectronic piezoelectric-semiconductor structure with the air gap (AEPSAG) was provided by a system of supports on LiNbO 3 . The supports were created by etching the piezoelectric with an ion beam [22].…”

“…The magnitude of the acousto-emf depends on the concentration and mobility of free carriers, charge on the surface states, the amplitude of induction induced by SAW on the surface of semiconductor and the initial bending of bands [19,20,22]. Since illumination in the absorption region can substantially change a number of these characteristics, the use of light is a powerful tool for studying the surface of semiconductors.…”

“…Indeed, for small illumination levels, the signal of TAE even slightly increases (Nо. 210), which is probably due to the approximation of the carrier concentration in SCR to the values optimal for the generation of TAE (since the conditions for generating the maximum signal of TAE are defined by two mutually opposite trends -the nearsurface layer resistance and the free carrier concentration in it, see, for example, [19,20,22]).…”