Structural and Electrical Characteristics of Alternative High‐
            <i>k</i>
            Dielectrics for CMOS Applications

Chiu, Fu-Chien; Mondal, Somnath; Pan, Tung-Ming

doi:10.1002/9783527646340.ch5

Cited by 7 publications

(13 citation statements)

References 140 publications

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“…The electric field decreases the Coulombic potential barrier of the electrons and subsequently increases its probability for being thermally excited out from the traps [70]. The exponential portion of P-F expression is very similar to Schottky emission, except the junction barrier height (ΦB) is replaced with the depth of traps' potential well (ΦT) and the barrier lowering effect in P-F is double of Schottky emission due to immobility of positive charge [78,79].…”

Section: Poole-frenkel (P-f) Emissionmentioning

confidence: 83%

“…Some of these conduction mechanisms rely on the electrical property at the electrode-dielectric interface, e.g., energy barrier height of the interface and conduction carriers in dielectric films; the others depend on the properties of the dielectrics itself, e.g., trap level, trap spacing, trap density, carrier drift mobility, dielectric relaxation time and density of states in conduction [70]. Among the electrode-limited conduction mechanisms are (i) Schottky emission; (ii) Fowler-Nordheim (F-N) tunneling; and (iii) direct tunneling.…”

Section: Typical Conduction Mechanism In Resistive Switching Memorymentioning

confidence: 99%

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Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

2015

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Abstract:Resistive switching effect in transition metal oxide (TMO) based material is often associated with the valence change mechanism (VCM). Typical modeling of valence change resistive switching memory consists of three closely related phenomena, i.e., conductive filament (CF) geometry evolution, conduction mechanism and temperature dynamic evolution. It is widely agreed that the electrochemical reduction-oxidation (redox) process and oxygen vacancies migration plays an essential role in the CF forming and rupture process. However, the conduction mechanism of resistive switching memory varies considerably depending on the material used in the dielectric layer and selection of electrodes. Among the popular observations are the Poole-Frenkel emission, Schottky emission, space-charge-limited conduction (SCLC), trap-assisted tunneling (TAT) and hopping conduction. In this article, we will conduct a survey on several published valence change resistive switching memories with a particular interest in the I-V characteristic and the corresponding conduction mechanism.

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Section: Poole-frenkel (P-f) Emissionmentioning

confidence: 83%

Section: Typical Conduction Mechanism In Resistive Switching Memorymentioning

confidence: 99%

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

2015

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“…In general, there are two types of conduction mechanisms in dielectric films, that is, electrode-limited conduction mechanism and bulk-limited conduction mechanism [1]. The electrode-limited conduction mechanism relies on the electrical properties at the electrode-dielectric interface.…”

mentioning

confidence: 99%

“…The electrode-limited conduction mechanism relies on the electrical properties at the electrode-dielectric interface. Based on this type of conduction mechanism, the key physical properties are the barrier height at the electrode-dielectric interface and the effective mass of the conduction carriers in dielectric films [1]. Meanwhile, the bulk-limited conduction mechanism relies on the electrical properties of the dielectric itself.…”

mentioning

confidence: 99%

“…Meanwhile, the bulk-limited conduction mechanism relies on the electrical properties of the dielectric itself. Based on the bulk-limited conduction mechanisms, some important physical parameters in the dielectric films can be obtained, such as the trap level, the trap spacing, the trap density, the carrier drift mobility, the dielectric relaxation time, and the density of states in the conduction band [1]. One can find a review article in which the analytical methods of conduction mechanisms in dielectric films are discussed in detail [1].…”

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confidence: 99%

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Thin Film Applications in Advanced Electron Devices

Chiu

Pan

Kundu

et al. 2014

Advances in Materials Science and Engineering

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Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes

Völkel

Braun

Belete

et al. 2023

Adv Funct Materials

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The 2D insulating material hexagonal boron nitride (h‐BN) has attracted much attention as the active medium in memristive devices due to its favorable physical properties, among others, a wide bandgap that enables a large switching window. Metal filament formation is frequently suggested for h‐BN devices as the resistive switching (RS) mechanism, usually supported by highly specialized methods like conductive atomic force microscopy (C‐AFM) or transmission electron microscopy (TEM). Here, the switching of multilayer hexagonal boron nitride (h‐BN) threshold memristors with two nickel (Ni) electrodes is investigated through their current conduction mechanisms. Both the high and the low resistance states are analyzed through temperature‐dependent current–voltage measurements. The formation and retraction of nickel filaments along boron defects in the h‐BN film as the resistive switching mechanism is proposed. The electrical data are corroborated with TEM analyses to establish temperature‐dependent current–voltage measurements as a valuable tool for the analysis of resistive switching phenomena in memristors made of 2D materials. The memristors exhibit a wide and tunable current operation range and low stand‐by currents, in line with the state of the art in h‐BN‐based threshold switches, a low cycle‐to‐cycle variability of 5%, and a large On/Off ratio of 107.

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Structural and Electrical Characteristics of Alternative High‐ k Dielectrics for CMOS Applications

Cited by 7 publications

References 140 publications

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Thin Film Applications in Advanced Electron Devices

Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes

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