Strong ferromagnetism of reduced graphene oxide

Spintronics holds the promise for future information technologies. Devices based on manipulation of spin are most likely to replace the current silicon complementary metal‐oxide semiconductor devices that are based on manipulation of charge. The challenge is to identify or design materials that can be used to generate, detect, and manipulate spin. Since the successful isolation of graphene and other two‐dimensional (2D) materials, there has been a strong focus on spintronics based on 2D materials due to their attractive properties, and much progress has been made, both theoretically and experimentally. Here, we summarize recent developments in spintronics based on 2D materials. We focus mainly on materials of truly 2D nature, that is, atomic crystal layers such as graphene, phosphorene, monolayer transition metal dichalcogenides, and others, but also highlight current research foci in heterostructures or interfaces. In particular, we emphasize roles played by computation based on first‐principles methods which has contributed significantly in the designs of spintronic materials and devices. We also highlight challenges and suggest possible directions for further studies. WIREs Comput Mol Sci 2017, 7:e1313. doi: 10.1002/wcms.1313 This article is categorized under: Structure and Mechanism > Computational Materials Science Electronic Structure Theory > Ab Initio Electronic Structure Methods Electronic Structure Theory > Density Functional Theory

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“…There have been very few experimental work on magnetism in 2D materials . Difficulty in growing high‐quality samples is an issue.…”

Section: Spin Generationmentioning

confidence: 99%

Prospects of spintronics based on 2D materials

Feng

Shen

Yang

et al. 2017

WIREs Comput Mol Sci

191

135

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“…It turns out that materials with completely filled 3d or 4f shells or with only s or p electrons can be ferromagnetic when they contain defects. Among those materials, graphite/graphene and oxides attract particular attention due to experimental evidence reported by various groups [3,5,10,[21][22][23][24][25][26][27]. However, the experimentally measured ferromagnetism remains a weak signal slightly above the detection limit of sensitive SQUID magnetometry [9,17,[28][29][30][31].…”

Section: Introductionmentioning

confidence: 99%

Defect-induced magnetism in SiC: Interplay between ferromagnetism and paramagnetism

et al. 2015

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Defect-induced ferromagnetism has triggered a lot of investigations and controversies. The major issue is that the induced ferromagnetic signal is so weak that it can sufficiently be accounted for by trace contamination. To resolve this issue, we studied the variation of the magnetic properties of SiC after neutron irradiation with fluence covering four orders of magnitude. A large paramagnetic component has been induced and scales up with defect concentration, which can be well accounted for by uncoupled divacancies. However, the ferromagnetic contribution is still weak and only appears in the low fluence range of neutrons or after annealing treatments. First-principles calculations hint towards a mutually exclusive role of the concentration of defects: a higher defectconcentration favors a larger magnetic interaction at the expense of spin polarization. Combining both experimental and first-principles calculation results, the defect-induced ferromagnetism can probably be understood as a local effect which cannot be scaled up with the volume. * Electronic address: s.zhou@hzdr.de 2

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“…The nature of the interedge interaction depends on the width of the zigzag graphene nanoribbon, the presence of extra carriers, edge functionalization, and line defects . Surface modification of a graphene sheet with intrinsically nonmagnetic atoms (often termed as addition) and functional groups (often termed as functionalization) has been identified as an alternative way to imprint magnetism in graphene; most prominent examples include graphane, graphone, and (reduced) graphene oxide . Such materials show ferromagnetic ordering at low temperatures.…”

mentioning

confidence: 99%

Sulfur Doping Induces Strong Ferromagnetic Ordering in Graphene: Effect of Concentration and Substitution Mechanism

et al. 2016

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Imprinting ferromagnetism to a graphene structure by substitution of carbon atoms with sulfur is reported. S-doped graphene (4.2 at%) shows strong ferromagnetic properties with saturation magnetization exceeding 5.5 emu g(-1) at 2 K, which is among the highest values reported for any sp-based system. The remarkable magnetic response is attributed to delocalization of electrons from sulfur injected into the graphene conduction band.

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Strong ferromagnetism of reduced graphene oxide

Cited by 75 publications

References 49 publications

Prospects of spintronics based on 2D materials

Prospects of spintronics based on 2D materials

Defect-induced magnetism in SiC: Interplay between ferromagnetism and paramagnetism

Sulfur Doping Induces Strong Ferromagnetic Ordering in Graphene: Effect of Concentration and Substitution Mechanism

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