Stress analysis in new improved differential vertical comb capacitive micro accelerometer using SOI technology

Dounkal, Manoj Kumar; Bhan, R. K.; Kumar, Navin

doi:10.1007/s00542-020-05155-3

Cited by 3 publications

(2 citation statements)

References 15 publications

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“…However, the ultimate tensile strength for Si (100), which is typically used in MEMS devices, may range from 1 to 4 GPa according to [ 60 , 61 ]. Since the residual stress resulting from a typical manufacturing process of a MEMS device may be as high as 0.5 GPa [ 62 ], the total mechanical stress is way below 4 GPa which falls within the tolerable range. As a matter of fact, the maximum tolerable stress should be experimentally evaluated and if the maximum stress calculated via FEA exceeds or is close to it, the cross section resistance of the flexure hinge should be increased, e.g., by increasing the out-of-plane thickness or its width.…”

Section: Development Of the New Microsystemmentioning

confidence: 99%

Analytical Modeling of a New Compliant Microsystem for Atherectomy Operations

et al. 2022

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This work offers a new alternative tool for atherectomy operations, with the purpose of minimizing the risks for the patients and maximizing the number of clinical cases for which the system can be used, thanks to the possibility of scaling its size down to lumen reduced to a few tenths of mm. The development of this microsystem has presented a certain theoretical work during the kinematic synthesis and the design stages. In the first stage a new multi-loop mechanism with a Stephenson’s kinematic chain (KC) was found and then adopted as the so-called pseudo-rigid body mechanism (PRBM). Analytical modeling was necessary to verify the synthesis requirements. In the second stage, the joint replacement method was applied to the PRBM to obtain a corresponding and equivalent compliant mechanism with lumped compliance. The latter presents two loops and six elastic joints and so the evaluation of the microsystem mechanical advantage (MA) had to be calculated by taking into account the accumulation of elastic energy in the elastic joints. Hence, a new closed form expression of the microsystem MA was found with a method that presents some new aspects in the approach. The results obtained with Finite Element Analysis (FEA) were compared to those obtained with the analytical model. Finally, it is worth noting that a microsystem prototype can be fabricated by using MEMS Technology classical methods, while the microsystem packaging could be a further development for the present investigation.

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Section: Development Of the New Microsystemmentioning

confidence: 99%

Analytical Modeling of a New Compliant Microsystem for Atherectomy Operations

et al. 2022

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“…Among these MEMS accelerometers, the Si-based capacitive accelerometers are the most widely used equipment in the fields of consumer electronics and industry because of their high sensitivity, low temperature sensitivity, and superior process compatibility [5]. In addition, the development of silicon on insulator (SOI) has further improved the performance of capacitive accelerometers [6][7][8] in terms of temperature characteristics.…”

Section: Introductionmentioning

confidence: 99%

Improvement and compensation of temperature drift of scale factor of a SOI-based MEMS differential capacitive accelerometer

Zhai

et al. 2023

Meas. Sci. Technol.

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In recent years, the analysis and improvement of temperature characteristics of Si-based capacitive accelerometers has received considerable research attention in the field of MEMS sensors. Generally, the influence of temperature on the accelerometers can be mitigated by optimizing the structural design and compensating the output signal. Herein, the output characteristics of an accelerometer designed with asymmetrically arranged combs were analyzed under various temperatures. The purpose of this paper is to improve the TDSF of MEMS capacitive accelerometer, using the asymmetric layout structure to improve the TDSF fundamentally, and the least square method to achieve temperature compensation efficiently. The variations in the temperature drift of the scale factor (TDSF) were compared for the symmetric and asymmetric structures. In addition, we modeled the accelerometer with an asymmetric structure for simulations to analyze the errors resulting from the electrostatic torsion phenomenon induced by the asymmetric structure. Moreover, a temperature compensation model was developed for the scale factor of the accelerometer, which was validated and verified with the data obtained from simulations and experiment. Furthermore, an accelerometer based on silicon on insulator was fabricated and tested to verify the simulation results and the compensation effects. According to the results, the scale factor of the studied accelerometer was 171.83 mV/g and the average value of the TDSF was 83.56 ppm/°C. Overall, the experimental results were almost consistent with the simulation results. Under the asymmetric layout, the scale-factor stability improvement of the accelerometer could reach up to 86.96%, and the error caused by electrostatic torsion was ~2.93%, which is relatively negligible. After compensation, the range and standard deviation of the scale factor of the accelerometer with respect to temperature were reduced by 94.46% and 95.69%, respectively, and the average value of TDSF was reduced by 95.90%, which verified the effectiveness of the compensation model.

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