Strain relief at the GaSb/GaAs interface versus substrate surface treatment and AlSb interlayers thickness

Wang, Y.; Ruterana, P.; Desplanque, L.; Kazzi, Salim El; Wallart, X.

doi:10.1063/1.3532053

Cited by 38 publications

(39 citation statements)

References 25 publications

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“…The repeatable IMF mode requires atomically smooth GaAs surface, relatively low temperature on GaAs surface and a negligibly low partial pressure of As in a growth chamber [27]. For the growth of GaSb/GaAs heterostructures applying IMF mode the technological conditions determined in previous sub-sections were employed: thermal treatment of GaAs substrate and growth conditions of GaSb layers.…”

Section: The Gasb/gaas Heterostructure With Imfmentioning

confidence: 99%

Comprehensive investigation of the interfacial misfit array formation in GaSb/GaAs material system

et al. 2018

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A comprehensive investigation of the interfacial misfit (IMF) array formation has been carried out. The studies were based on the static phase diagram for GaAs (001) surface and As 2 dimers on the surface. Prior to the initiation of the GaSb growth two attempts of the temperature decreasing were performed: before and after the GaAs termination. The GaAs was grown in the optimal conditions for GaSb material. The influence of the interruption time on GaSb/GaAs heterostructure parameters was examined. Two cases were investigated: with and without Sb-soaking of the GaAs surface. The periodic array of edge dislocations at GaSb/GaAs interface was confirmed using Burger's circuit theory. Careful examination of misfit surroundings revealed one uncompleted Burger's vector that indicated one dislocation of mixed type among eight of the edge type. The distance between lattice sites of dislocations was 5.51 nm on average. The crystal quality of 5.0 µm GaSb layer was characterized by FWHM 2θ/ω = 42 arcsec, FWHM RC = 125 arcsec. The EPD = 4 × 10 6 cm − 2 was estimated after etching in FeCl 3 :HCl solution. The Δq z /Δq x ratio of 0.60 for 5.0 µm GaSb layer was higher than for 2.5 µm GaSb layer of 0.59. The probable reason was the thickness-dependent 60° dislocation density. The electrical parameters measured for 2.5 µm GaSb were: p = 4.0 × 10 16 cm −3 (2.0 × 10 16 cm −3 ) and µ = 599 cm 2 /V s (3420 cm 2 /V s) at 300 K (77 K).

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Section: The Gasb/gaas Heterostructure With Imfmentioning

confidence: 99%

Comprehensive investigation of the interfacial misfit array formation in GaSb/GaAs material system

et al. 2018

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“…[1][2][3][4][5][6] Although it could be expected to obtain only the 90 MDs due to their energetically favourable state with respect to the 60 ones, both types are usually observed in this system at similar growth conditions. [7][8][9] The 60 MDs generate threading dislocations (TDs), which emerging from the interface glide to the surface resulting in material degradation, decrementing its electrical and optical properties. 10,11 Understanding the mechanism that determines defect type and density at the GaSb/ GaAs interface depending on growth conditions is crucial since 90 MDs can completely relax the system, without formation of any TDs, whereas the 60 MDs can glide or interact with 90 MDs causing them also to glide further deteriorating the device performance by creation of more TDs.…”

mentioning

confidence: 99%

Solid solution strengthening in GaSb/GaAs: A mode to reduce the TD density through Be-doping

Gutiérrez

Araújo

Jurczak

et al. 2017

Applied Physics Letters

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The need for a low bandgap semiconductor on a GaAs substrate for thermophotovoltaic applications has motivated research on GaSb alloys, in particular, the control of plastic relaxation of its active layer. Although interfacial misfit arrays offer a possibility of growing strain-free GaSb-based devices on GaAs substrates, a high density of threading dislocations is normally observed. Here, we present the effects of the combined influence of Be dopants and low growth temperature on the threading dislocation density observed by Transmission Electron Microscopy. The Be-related hardening mechanism, occurring at island coalescence, is shown to prevent dislocations to glide and hence reduce the threading dislocation density in these structures. The threading density in the doped GaSb layers reaches the values of seven times less than those observed in undoped samples, which confirms the proposed Be-related hardening mechanism.

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“…For the cross-sectional samples, slices of 2x5 mm 2 in size were cut from the substrate side along the [110] and [1][2][3][4][5][6][7][8][9][10] directions. Two of the slices were glued face to face and packed in a copper tube of 3 mm in diameter with the epoxy glue, then the tube were cut in to disk of about 800 m in thickness.…”

Section: Methodsmentioning

confidence: 99%

Transmission electron microscopy of misfit dislocation and strain relaxation in lattice mismatched III-V heterostructures versus substrate surface treatment

et al. 2011

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High resolution transmission electron microscopy in combination with geometric phase analysis is used to investigate the interface misfit dislocations, strain relaxation, and dislocation core behavior versus the surface treatment of the GaAs for the heteroepitaxial growth of GaSb. It is pointed out that Sb-rich growth initiation promotes the formation of a high quality network of Lomer misfit dislocations that are more efficient for strain relaxation.

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Strain relief at the GaSb/GaAs interface versus substrate surface treatment and AlSb interlayers thickness

Cited by 38 publications

References 25 publications

Comprehensive investigation of the interfacial misfit array formation in GaSb/GaAs material system

Comprehensive investigation of the interfacial misfit array formation in GaSb/GaAs material system

Solid solution strengthening in GaSb/GaAs: A mode to reduce the TD density through Be-doping

Transmission electron microscopy of misfit dislocation and strain relaxation in lattice mismatched III-V heterostructures versus substrate surface treatment

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