DOI: 10.1103/physrevb.73.045312
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Abstract: We have determined the strain in the three crystallographic directions in InAs quantum wires ͑QWr͒ grown by molecular beam epitaxy on ͑001͒InP substrate. We used triple crystal x-ray diffraction to make scans along and perpendicular to the QWr direction in reciprocal space, around InP͑220͒ reflections. We use the shape and strain sensitivity of the different scans to deconvolute both contributions. We used the ␣ f scan analysis in grazing incidence diffraction to measure the strain relaxation perpendicular to…

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