Stimulated Emission and Laser Action in Gallium Nitride

Dingle, R.; Shaklee, K. L.; Leheny, R. F.; Zetterstrom, R. B.

doi:10.1063/1.1653730

Cited by 194 publications

(60 citation statements)

References 5 publications

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“…From both fundamental and practical points of view, it is vital to know to what extent excitonic effects can contribute stimulated emission at elevated temperatures. Following the first observation of optical gain in GaN [1], inelastic exciton-exciton collisions were found to be important in optical stimulation up to 120-180 K in needle crystals [2], metalorganic chemical vapor deposition (MOCVD) layers grown over sapphire [3,4], and hydride vapor-phase epitaxy (HVPE)-grown bulk crystals [5,6]. In GaN/SiC epilayers and structures, stimulated annihilation of excitons was observed up to 300 K temperature [7].…”

mentioning

confidence: 99%

Intrinsic Mechanisms of Stimulated Emission in Homoepitaxial GaN

Kazlauskas

Тамулайтис

Žukauskas

et al. 2002

phys. stat. sol. (c)

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confidence: 99%

Intrinsic Mechanisms of Stimulated Emission in Homoepitaxial GaN

Kazlauskas

Тамулайтис

Žukauskas

et al. 2002

phys. stat. sol. (c)

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“…On the other hand, optically pumped stimulated emission from GaN needle crystal was achieved at 2 K first by Dingle et al ~ in 1971, and later at low temperatures by several group s. ~ In 1990, we succeeded, for the first time,~7 in achieving room-temperature UV-stimutated emission from our epitaxial GaN film by optical pumping, as shown in Fig. 2.…”

Section: Introductionmentioning

confidence: 89%

Widegap Column‐ III Nitride Semiconductors for UV/Blue Light Emitting Devices

Akasaki

Amano

1994

J. Electrochem. Soc.

130

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This paper reports on a high-quality AtGaN/GaN double heterostructure (DH) which shows UV emission stimulated by optical pumping at room temperature with low threshold power in both edge and surface modes, and a high-efficiency blue light emitting diode (LED) and UV-LED based on p-n GaN homojunction and A1GaN/GaN DH. The process for the fabrication of LEDs and DH and their characteristics are presented.Demand for a high-power short-wavelength light emitter in the blue, violet, and ultraviolet (UV) regions, such as light emitting diode (LED) and laser diode (LD) has been increasing. Applications of these new devices include new full-color large-scale flat panel display systems, compact and high-density optical storage systems, high-speed printing systems, and small medical and biological apparatuses. Realization of these new devices will require highquality wide-bandgap semiconductor films. Column-III nitrides are promising candidates as materials for fabrication of such short-wavelength light emitters, because the wurtzite polytypes of InN, GaN, and A1N form a continuous alloy system whose direct bandgap ranges from 1.9 eV for InN, 3.4 eV for GaN, and to 6.2 eV for AIN, as shown in Fig. 1.During the two decades before 1985, many pioneering works on these nitrides were conducted on crystal growth and doping, ~-8 on device fabrication and physics, 9 and on physical properties. L~ However, it had been quite difficult to grow high-quality epitaxial nitride films, in particular, with a flat surface free from cracks. This is mainly due to the lack of substrate materials for which the lattice constant and thermal expansion coefficient are close to those of GaN and alloys, n Moreover, it was suggested by many researchers that the column-III nitrides have a strong nonstoichiometry problem. ~2In 1986, we succeeded in overcoming the problems mentioned above and in growing high-quality GaN with a spec-* Electrochemical Society Active Member. On the other hand, optically pumped stimulated emission from GaN needle crystal was achieved at 2 K first by Dingle et al. ~ in 1971, and later at low temperatures by several group s. ~ In 1990, we succeeded, for the first time,~7 in achieving room-temperature UV-stimutated emission from our epitaxial GaN film by optical pumping, as shown in Fig. 2. This emission wavelength of 375 nm is much shorter than those of ZnSe-based II-VI compounds. Khan et aI. I8 achieved the first surface-mode UV-stimulated emission from optically pumped GaN and developed GaN electronic devices,~9 which were grown by this low-temperature-deposited A1N buffer layer technique. Nakamura et al. 2~ developed the low-temperature-deposited GaN buffer layer method for the growth of GaN, the concept of which is essentially the same as that of the A1N buffer layer technique.We found that silicon (St) acts as a donor in nitrides, and the electron concentration of n-type nitride has been controlled, while p-type nitrides had never been realized. In 1989, we succeeded in producing, for the first time, distinct p-t...

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“…The use of InGaN/GaN double heterostructures in LEDs in 1994 by Nakamura et al [1] and the achievement of pdoping in GaN by Akasaki [2] are widely credited with re-igniting the III-V nitride system. The recent realization of blue lasers has taken over 20 years from the first optical pumped stimulated emission observed in GaN crystals [3] and the first LEDs [4] fabrication. When one of the group III elements, boron, aluminum, gallium or indium is bonded to the group V element nitrogen, a III-nitride compound semiconductor is formed.…”

Section: Introductionmentioning

confidence: 99%

Reflection coefficient and optical conductivity of gallium nitride GaN

Akinlami¹

2012

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Here we report the reflection coefficient and optical conductivity of gallium nitride (GaN). The reflection coefficient obtained in the photon energy range 2-10 eV shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was observed that the reflection coefficient has its highest value 0.54 at the photon energy 7.0 eV. Variation of the real part of optical conductivity with photon energy shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was observed that the real part of optical conductivity has the maximum value 5.75·10 15 for the photon energy 7.0 eV, and it decreases until coming to zero at 10.0 eV. The peaks indicate regions of deeper penetration of electromagnetic waves, and they also show high conductivity. The imaginary part of optical conductivity obtained for GaN in the photon energy range 2.0 to 10.0 eV shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was observed that it has a minimum value of -6.46·1015 for the photon energy 8.0 eV and a maximum value at -1.2·10 15. This implies that there is a reduction in conductivity of GaN, and likewise, reduction in the propagation of electromagnetic waves in this region.

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Stimulated Emission and Laser Action in Gallium Nitride

Cited by 194 publications

References 5 publications

Intrinsic Mechanisms of Stimulated Emission in Homoepitaxial GaN

Intrinsic Mechanisms of Stimulated Emission in Homoepitaxial GaN

Widegap Column‐ III Nitride Semiconductors for UV/Blue Light Emitting Devices

Reflection coefficient and optical conductivity of gallium nitride GaN

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