Steady state and transient electron transport properties of bulk dilute GaN<i>x</i>As1−<i>x</i>

Naylor, Daniel R.; Dyson, A.; Ridley, B. K.

doi:10.1063/1.3691597

Cited by 7 publications

(4 citation statements)

References 16 publications

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“…Details of the implementation with equilibrium phonons at the lattice temperature can be found elsewhere [11], [12]. Material parameters for GaN and AlN are those from the wurtzite forms; however, we adopt the commonly used approximation that we have a single LO mode and we ignore the dispersion, since it is small.…”

Section: Methodsmentioning

confidence: 99%

Hot-Phonon Effects on High-Field Transport in GaN and AlN

Dyson

Naylor

Ridley

2015

IEEE Trans. Electron Devices

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We have studied the effects of hot phonons on the high-field transport in GaN and AlN. The dynamics of the nonequilibrium electron-longitudinal optical phonon system is studied through an ensemble Monte Carlo code. We find that under steady-state conditions, the hot phonons cause the randomization of the electron momentum, and increase their mean energy leading to diffusive heating. Average electron energies of three and two times those in the equilibrium phonon cases are found for GaN and AlN at the applied fields of 100 and 350 kV/cm, respectively. The electron velocity is reduced compared with the case with equilibrium phonons at the lattice temperature. In the transient regime, peak velocities reached at overshoot are reduced when the nonequilibrium phonons are considered. Index Terms-Hot carriers, Monte Carlo (MC) methods.0018-9383

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Section: Methodsmentioning

confidence: 99%

Hot-Phonon Effects on High-Field Transport in GaN and AlN

Dyson

Naylor

Ridley

2015

IEEE Trans. Electron Devices

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“…Then, in 2012, Naylor et al [287] examined the steady-state and transient electron transport that occurs within bulk wurtzite GaN using an analytical band-structure that more accurately reflects the nature of the actual band-structure. In 2012, Naylor et al [288] also examined the electron transport that occurs within dilute GaN x As 1Àx samples. In 2013, Bellotti et al [289] employed a full-band model in order to determine the velocity-field characteristics associated with AlGaN alloys.…”

Section: Recent Developmentsmentioning

confidence: 98%

A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review

Siddiqua

Hadi

Shur

et al. 2015

J Mater Sci: Mater Electron

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Wide energy gap semiconductors are broadly recognized as promising materials for novel electronic and optoelectronic device applications. As informed device design requires a firm grasp of the material properties of the underlying electronic materials, the electron transport that occurs within the wide energy gap semiconductors has been the focus of considerable study over the years. In an effort to provide some perspective on this rapidly evolving and burgeoning field of research, we review analyzes of the electron transport within some wide energy gap semiconductors of current interest in this paper. In order to narrow the scope of this review, we will primarily focus on the electron transport that occurs within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide in this review, these materials being of great current interest to the wide energy gap semiconductor community; indium nitride, while not a wide energy gap semiconductor in of itself, is included as it is often alloyed with other wide energy gap semiconductors, the resultant alloys being wide energy gap semiconductors themselves. The electron transport that occurs within zinc-blende gallium arsenide is also considered, albeit primarily for bench-marking purposes. Most of our discussion will focus on results obtained from our ensemble semi-classical three-valley Monte Carlo simulations of the electron transport within these materials, our results conforming with state-of-the-art wide energy gap semiconductor orthodoxy. A brief tutorial on the Monte Carlo electron transport simulation approach, this approach being used to generate the results presented herein, is also provided. Steady-state and transient electron transport results are presented. The evolution of the field, and a survey of the current literature, are also featured. We conclude our review by presenting some recent developments on the electron transport within these materials.

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“…Then, in 2012, Naylor et al[349] examined the steady-state and transient electron transport that occurs within bulk wurtzite GaN using an analytical band-structure that more accurately reflects the nature of the actual band-structure. In 2012, Naylor et al[350] also examined the electron transport that occurs within dilute GaNxAs1-x samples. In 2013, Bellotti et al[351] employed a full-band model in order to determine the velocity-field characteristics associated with AlGaN alloys.…”

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confidence: 99%

Electron transport within the wurtzite and zinc-blende phases of gallium nitride and indium nitride

Siddiqua

O’Leary

2018

J Mater Sci: Mater Electron

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Wide energy gap semiconductors are broadly recognized as promising materials for novel electronic and opto-electronic device applications. As informed device design requires a firm grasp on the material properties of the underlying electronic materials, the electron transport that occurs within the wide energy gap semiconductors has been the focus of considerable study over the years. We review analyses of the electron transport within some wide energy gap semiconductors of current interest. In this thesis, I primarily focus on the electron transport that occurs within the wurtzite and zinc-blende phases of gallium nitride and indium nitride, these materials being of great current interest to the wide energy gap semiconductor community; indium nitride, while not a wide energy gap semiconductor of itself, is included as it is often alloyed with other wide energy gap semiconductors. The electron transport that occurs within zinc-blende gallium arsenide has also been considered. Most of the discussion focus on the steady-state and transient electron transport results obtained from the ensemble semi-classical three-valley Monte Carlo simulations of the electron transport within these materials.The evolution of the field, a survey of the current literature, and some applications for the results will also be featured. Based on this analysis, we have drawn the following conclusions. First, it is found that all of the velocityfield characteristics corresponding to the materials under investigation in this analysis exhibit peaks, regions of negative differential mobility, and regions of high-field saturation. Wurtzite Indium nitride, with its small electron effective mass, exhibits the highest peak electron drift velocity. The transient overshoot observed for the case of wurtzite Indium nitride is also found to be the most pronounced of all of the materials considered in this analysis. This suggests that the wurtzite phase of Indium nitride and its zinc-blende counterpart may offer great potential for future electron device applications. vi Rensselaer Polytechnic Institute, for example, was one of the first researchers to explore the wide energy gap semiconductors, GaN and InN, through the use of Monte Carlo electron transport simulations. In fact, some of his initial explorations into the nature of the electron transport within these materials were performed by him in concert with Dr. O'Leary. Dr. Shur and Dr. O'Leary have established a vigorous and active research collaboration, and the papers that I wrote within the scope of my doctoral studies were merely the latest of a large number of publications that have arisen from this collaboration. Dr. Shur commented on each manuscript, and made some suggestions in terms of interpreting the results. These definitely helped improve the clarity and effectiveness of my publications.

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Steady state and transient electron transport properties of bulk dilute GaNxAs1−x

Cited by 7 publications

References 16 publications

Hot-Phonon Effects on High-Field Transport in GaN and AlN

Hot-Phonon Effects on High-Field Transport in GaN and AlN

A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review

Electron transport within the wurtzite and zinc-blende phases of gallium nitride and indium nitride

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