Status of the GaN HEMT Standardization Effort at the Compact Model Coalition

Mertens, S.D.

doi:10.1109/csics.2014.6978580

Cited by 12 publications

(1 citation statement)

References 16 publications

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“…The primary objective is to enhance the accuracy of FE models by developing an empirical formula tailored specifically for ScAlN/AlGaN/GaN HEMTs, thereby offering a more reliable simulation of drain current behavior. The Compact Model Council (CMC) [22] for analog GaN transistors after evaluating and shortlisting eight compact models, pioneering the standardization of two models for use in analog and RF simulation tools: The two models being referred to are the MVSG-RF [23] and the ASM-HEMT [24]. Before the standardization efforts by the Compact Model Council (CMC), models that were originally developed for GaAs and InP were employed for GaN HEMTs.…”

Section: Introductionmentioning

confidence: 99%

Comprehensive empirical modeling of ScAlN/AlGaN/GaN ferroelectric HEMT

Pyngrope,

Chaturvedi,

Dasgupta

et al. 2024

Semicond. Sci. Technol.

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This correspondence introduces a concise depiction of a High Electron Mobility transistor (HEMT) utilizing a model that incorporates theeffect of ferroelectric (FE) polarization on the empirical expression for drain current. This is accomplished by modifying the basic Shockley Equation (S.E) for MESFET. The model employed in this investigation is particularly geared towards investigating the impact of the counterclockwise hysteresis effect due to the use of dielectric ScAlN on the transfer characteristics (Id − Vgs), which is mainly attributed to trapping and de-trapping of charge carriers at the dielectric/semiconductor interface. Modifying the S.E. made it possible to replicate the behavior observed in experimental HEMT accurately. We reported the modified drain current empirical expressions for the ScAlN/AlGaN/GaN HEMT that considers the FE polarization. The results of this study showed good agreement between the Id − Vgs characteristics obtained from the analytical and experimental data, with a root mean square deviation (RMSD) error of 0.97% and a mean squared error (MSE) error of 0.94%. This analytical drain current model, presented herein for the first time, incorporates a limited number of fitting parameters. Therefore, enhancing the computational efficiency to assess the performance of ferroelectric GaN HEMTs for usage in wide-area electronics.

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Section: Introductionmentioning

confidence: 99%

Comprehensive empirical modeling of ScAlN/AlGaN/GaN ferroelectric HEMT

Pyngrope,

Chaturvedi,

Dasgupta

et al. 2024

Semicond. Sci. Technol.

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Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects

Teo

Zhang

Chowdhury

et al. 2021

Journal of Applied Physics

138

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GaN technology is not only gaining traction in power and RF electronics but is also rapidly expanding into other application areas including digital and quantum computing electronics. This paper provides a glimpse of future GaN device technologies and advanced modeling approaches that can push the boundaries of these applications in terms of performance and reliability. While GaN power devices have recently been commercialized in the 15–900 V classes, new GaN devices are greatly desirable to explore both higher-voltage and ultra-low-voltage power applications. Moving into the RF domain, ultra-high frequency GaN devices are being used to implement digitized power amplifier circuits, and further advances using the hardware–software co-design approach can be expected. On the horizon is the GaN CMOS technology, a key missing piece to realize the full-GaN platform with integrated digital, power, and RF electronics technologies. Although currently a challenge, high-performance p-type GaN technology will be crucial to realize high-performance GaN CMOS circuits. Due to its excellent transport characteristics and ability to generate free carriers via polarization doping, GaN is expected to be an important technology for ultra-low temperature and quantum computing electronics. Finally, given the increasing cost of hardware prototyping of new devices and circuits, the use of high-fidelity device models and data-driven modeling approaches for technology-circuit co-design are projected to be the trends of the future. In this regard, physically inspired, mathematically robust, less computationally taxing, and predictive modeling approaches are indispensable. With all these and future efforts, we envision GaN to become the next Si for electronics.

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