Static Power Consumption in CMOS Gates Using Independent Bodies

Abstract

Abstract. It has been reported that the use of independent body terminals for series transistors in static bulk-CMOS gates improves their timing and dynamic power characteristics. In this paper, the static power consumption of gates using this approach is addressed. When compared to conventional common body static CMOS, important static power enhancements are obtained. Accurate electrical simulation results reveals improvements up to 35% and 62% in NAND and NOR gates respectively.