DOI: 10.1109/isscc.1979.1156007
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Abstract: NONLINEAR LOAD DEVICES in static bipolar memory cells allow a relatively large sense current compared with the standby current. In such cells, a fast address access time and a short write time can be combined with a reasonably low standby power dissipation. In recent years, several approaches to passive nonlinear load devices have been developed. In a favorite method a load resistor is bypassed, either with a PN diode' (slow), or with a Schottky diode' (fast). In these cells, with resistors and diodes in para…

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