Abstract:The attractive mechanical and electronic properties of freestanding graphene has led to the exploration of two-dimensional (2D) materials which can be integrated with contemporary electronics. As a 2D analog of graphene, stanene has become a hopeful candidate for 2D films due to its excellent quantum effects, superconductivity, and thermoelectric properties. Focusing on the promising 2D elemental material stanene, the fundamental electronic properties and experimental preparation of this material are reviewed.… Show more
“…The relevant structural data of graphene, 73,75-79 silicene, 72,73,75,[80][81][82] germanene, 73,75,[83][84][85] stanene, 73,75,83,84,86,87 and plumbene 74,[88][89][90] are presented in Table 4. In Fig.…”
Inverse dependence of 2D covalent bonding on bond length of elemental and isoelectronic binary monolayers of the main group elements II–VI. This behavior is also observed for the Young's modulus and ultimate strength.
“…The relevant structural data of graphene, 73,75-79 silicene, 72,73,75,[80][81][82] germanene, 73,75,[83][84][85] stanene, 73,75,83,84,86,87 and plumbene 74,[88][89][90] are presented in Table 4. In Fig.…”
Inverse dependence of 2D covalent bonding on bond length of elemental and isoelectronic binary monolayers of the main group elements II–VI. This behavior is also observed for the Young's modulus and ultimate strength.
“…Then further researches have been devoted to exploring the distinct elec-tronic properties of stanene formed on different substrates, such as semiconducting InSb(111), SiC(0001) and MoS2 [11,14,15], semimetals Sb(111) [16], and metallic Ag(111) [17], Cu(111) [18]; for interesting reviews, see Refs. [19] and [20]. Searching for alternative substrate materials, recent theoretical works especially predicted interesting possibilities with the Au(111) surface [21], while density functional theory (DFT) calculations indicate that low-buckled stanene is more stable than highly buckled stanene [3].…”
Stanene, which is predicted to be a quantum spin Hall topological insulator with tunable topological state, seems to be the most promising candidate of the post-graphene elemental two-dimensional (2D) materials. Here, we prepared epitaxial honeycomb-like stanene on gold (111) substrates and investigated its superstructure by Low Energy Electron Diffraction and Scanning Tunneling Microscopy. Angle-Resolved PhotoEmission Spectroscopy was applied to explore the electronic structures, further confirmed by first principles calculations. The stanene-like sheet forms a nearly planar structure on the Au(111) surface with a "2×√3" superstructure in large surface areas. Core-level spectroscopy reveals that the stanene-like sheet lays almost directly on the Au(111) surface. This is consistent with DFT calculations of the atomic structure. A characteristic 2D band with parabolic dis-persion is observed.
“…Researchers of late, have started paying attention to Group-IV elements based two dimensional (2D) materials such as silicene [1][2][3][4][5][6][7], germanene [8] and stanene [8] owing to their similarity in electronic properties with graphene and their possible application in nanoelectronic devices [9]. Among these, stanene has drawn keen interest due to it's possible application as quantum hall insulator [10], topological insulator [11] and topological superconductor [12].…”
Section: Introductionmentioning
confidence: 99%
“…This buckled structure gives rise to many novel properties such as Spin Hall Effect and bandgap modulation in the presence of an external electric field [15]. The low buckled (LB) stanene structure has a space group of P3m1 [8]. However, stanene shows a zero bandgap without SOC, and a SOC induced bandgap of around 100 meV.…”
Properties of Sn/BeO heterostructure formed with beryllium oxide (BeO) monolayer and 2D stanene (Sn) is studied in this work. The first-principle study is employed here to systematically investigate the structural stability and electrical properties of the Sn/BeO heterostructure. The results from simulations reveal that the introduction of BeO not only leads to a significant bandgap opening of 98 meV, but it also retains the various intrinsic electrical properties of stanene to a large extent. The effect of spin-orbit coupling (SOC) is studied both in pristine stanene as well as in Sn/BeO heterostructure. The Sn/BeO heterostructure shows the Rashba-type of spin-splitting under SOC, which is very promising for application in spintronic devices. Moreover, it is also observed that the bandgap can be tuned by applying external strain and electric field, while the characteristic Dirac cone is maintained throughout. The application of an external electric field is found to be more effective in bandgap modulation. It leads to a linear change in the bandgap, with a bandgap value of 402 meV for 4 V nm −1 . The results obtained from our study indicate that Sn/BeO heterostructure can be a suitable material for the development of spintronic devices.
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