Stabilization in electrical characteristics of hydrogen-annealed ZnO:Al films

Oh, Byeong Yun; Jeong, Min Chang; Myoung, Jae Min

doi:10.1016/j.apsusc.2007.02.181

Cited by 91 publications

(46 citation statements)

References 22 publications

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“…It can be expected that the limited improvement in conductivity for large ZnO:Al thickness values observed in Fig. 1(a) is also caused by hydrogen diffusing in the grains, providing additional doping 33,34,42,43 and, thereby, promoting a stronger contribution of the ionized impurity scattering. It has been recently demonstrated 22 that upon annealing of the capped ZnO:Al films the scattering mechanism shifts from grain boundary scattering to ionized impurity scattering.…”

Section: à3mentioning

confidence: 99%

Improved conductivity of aluminum-doped ZnO: The effect of hydrogen diffusion from a hydrogenated amorphous silicon capping layer

Ponomarev

Sharma

Verheijen

et al. 2012

Journal of Applied Physics

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Improved conductivity of aluminum-doped Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Related ArticlesHigh Si and Ge n-type doping of GaN doping -Limits and impact on stress Appl. Phys. Lett. 100, 122104 (2012) Generalized conductivity model for polar semiconductors at terahertz frequencies Appl. Phys. Lett. 100, 122103 (2012) Numerical analysis of formation properties of a high-field dipole domain for submicron GaAs field-effect transistor devices J. Appl. Phys. 111, 054513 (2012) Thermoelectric properties of Zn-doped GaSb J. Appl. Phys. 111, 043704 (2012) Efficient room-temperature spin detector based on GaNAs

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Section: à3mentioning

confidence: 99%

Improved conductivity of aluminum-doped ZnO: The effect of hydrogen diffusion from a hydrogenated amorphous silicon capping layer

Ponomarev

Sharma

Verheijen

et al. 2012

Journal of Applied Physics

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“…[20] Nevertheless, intriguing basic questions involving the interplay between ZnO crystal orientation/polarity and the kinetics of the interaction with hydrogen remain poorly investigated; a better understanding of such will be beneficial from a technological perspective. In particular, it is debatable whether the interaction of ZnO with hydrogen is detrimental (i.e., leading to etching, reduction to metallic Zn, loss of optical transparency) or beneficial (i.e., leading to passivation of defects and grain boundaries, increase in electrical conductivity and photoluminescence [21,22] ). Therefore, it is of great importance from both fundamental and technological viewpoints to study the interaction of ZnO with atomic hydrogen, taking into account any interplay of polarity and of crystalline properties of the ZnO itself.…”

mentioning

confidence: 99%

Is There a ZnO Face Stable to Atomic Hydrogen?

et al. 2009

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The interaction of atomic hydrogen with ZnO depends on ZnO polarity. O‐polar (000−1) ZnO is stable to atomic hydrogen; Zn‐polar (0001) ZnO is partially attacked by atomic hydrogen, affording a self‐inhibiting reaction that enriches the surface in metallic Zn; nonpolar (11−20) ZnO is completely etched by atomic hydrogen; and the nonpolar (10−10) ZnO is roughened during interaction with atomic hydrogen.

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“…3) Owing to its unique electrical and optical properties, it has been popularly used in varistors, chemical sensors, piezoelectric devices, etc. Recently, ZnO thin films have attracted interest for solar cell and flat panel display (FPD) applications, such as window layers for thin film solar cells, 4) transparent conductive layers for touch panels 5) and active channel layers for thin-film transistors (TFTs). 6) ZnO is an n-type oxide semiconductor material with a direct wide bandgap of 3.35 eV.…”

Section: Introductionmentioning

confidence: 99%

Effects of Mg Additions on Microstructure and Optical Properties of Sol-Gel Derived ZnO Thin Films

2008

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Polycrystalline thin-films of Zn 1Àx Mg x O (0 x 0:36) have been prepared by a sol-gel method and a spin-coating technique. In this work, the authors investigate the effects of the Mg addition on crystallization, microstructure and optical properties for ZnO thin films. Mg was incorporated into ZnO thin films that were deposited onto glass substrates by a spin coating technique. The as-deposited films were preheated at 300 C for 10 min and then annealed at 500 C for 1 h. The results show that addition of Mg-species in ZnO films markedly decreased surface roughness, improved transparency in the visible range and increased resistivity. Among the Zn 1Àx Mg x O films investigated in the present study, the Zn 0:8 Mg 0:2 O thin film exhibited the best properties, namely single wurzite phase, an optical transmittance of 94.7%, an RMS roughness of 1.63 nm and a resistivity of 8:3 Â 10 5 -cm.

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Stabilization in electrical characteristics of hydrogen-annealed ZnO:Al films

Cited by 91 publications

References 22 publications

Improved conductivity of aluminum-doped ZnO: The effect of hydrogen diffusion from a hydrogenated amorphous silicon capping layer

Improved conductivity of aluminum-doped ZnO: The effect of hydrogen diffusion from a hydrogenated amorphous silicon capping layer

Is There a ZnO Face Stable to Atomic Hydrogen?

Effects of Mg Additions on Microstructure and Optical Properties of Sol-Gel Derived ZnO Thin Films

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