Stability of organic thin-film transistors based on ultrathin films of dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT)

Acharya, Rachana; Günder, Darius; Breuer, Tobias; Schmitz, Guido; Klauk, Hagen; Witte, Gregor

doi:10.1039/d0tc04554c

Cited by 22 publications

(16 citation statements)

References 64 publications

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“…this value is in class with the highest mobility for polycrystalline DNTT-based transistors on rigid substrates [37][38][39][40] . The low variability, combined with a device yield as high as 100%, confirms the high reproducibility of the OPT performance.…”

Section: Opt Performancementioning

confidence: 85%

Flexible fully organic indirect detector for megaelectronvolts proton beams

Calvi

Basiricò²,

Carturan³

et al. 2023

npj Flex Electron

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A flexible, fully organic detector for proton beams is presented here. The detector operates in the indirect mode and is composed of a polysiloxane-based scintillating layer coupled to an organic phototransistor, that is assessed for flexibility and low-voltage operation (V = −1 V), with a limit of detection of 0.026 Gy min−1. We present a kinetic model able to precisely reproduce the dynamic response of the device under irradiation and to provide further insight into the physical processes controlling it. This detector is designed to target real-time and in-situ dose monitoring during proton therapy and demonstrates mechanical flexibility and low power operation, assessing its potential employment as a personal dosimeter with high comfort and low risk for the patient. The results show how such a proton detector represents a promising tool for real-time particle detection over a large area and irregular surfaces, suitable for many applications, from experimental scientific research to innovative theranostics.

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Section: Opt Performancementioning

confidence: 85%

Flexible fully organic indirect detector for megaelectronvolts proton beams

Calvi

Basiricò²,

Carturan³

et al. 2023

npj Flex Electron

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“…For the r -VOFET semiconductor channel, we employed DNTT (Figure d), which is an air-stable high-mobility (i.e., >10 –2 cm 2 /Vs) ,− OSC widely used as the active layer of the state-of-the-art organic transistors. ,,,− ,, Figure e exhibits the AFM topography image acquired from the DNTT thin film deposited at the r -VOFET active area. One may observe homogeneously distributed DNTT aggregates on the thin-film surface, giving rise to a smooth topography.…”

Section: Resultsmentioning

confidence: 99%

Pushing On-Chip Photosensitivity Forward Using Edge-Driven Vertical Organic Phototransistors

Andrade

Merces

Nawaz

et al. 2023

ACS Appl. Electron. Mater.

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Developing high-performance photosensors using prototype device architectures is essential to pushing forward developing and advancing next-generation optoelectronic applications. This work reports an organic phototransistor (OPT) with an ultra-short conducting channel (tens of nanometers) and outstanding photoelectric conversion efficiency. The OPT is based on a vertical organic field-effect transistor (VOFET) architecture, which utilizes a rolled-up metallic nanomembrane (NM) as the drain electrode and a photolithographically patterned (rectangular-shaped) perforated source electrode. These features expand the concept of conventional VOFETs as the former enables the incorporation of ultra-thin active layers and allows reliable control over gate-induced modulation of channel current. Using the engineering as abovementioned strategies, we focused on obtaining an improved device performance, studying their fundamental operating principle, and further investigating their application as photosensors. The optimized devices exhibited low operating voltages (<5 V) and enhanced on/off current ratio (∼105). The VOFET photoresponse was characterized by measuring the electrical characteristics in the dark and under illumination using three different monochromatic light colors. Under blue light, our devices demonstrated impressive photosensitivity (P max ≈ 105) and fast photoelectric conversion (steep light-induced threshold voltage shift), demonstrating that the rolled-up NM OPT shows excellent potential as a highly sensitive photodetector with low power consumption.

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“…As mentioned above, film strain is the deep origin of aggregate state instability and device failure in OFETs. As a result, the thin OSC film suffers from tensile strain and tends to dewet during the long-term storage period. ,, To demonstrate the validity of the strain balance strategy and exclude the possible influence of environmental factors (Figure S2), an accelerated aging test was conducted by annealing the OSC films in the nitrogen glovebox. As shown in Figure , the film morphology and molecular packing were investigated by AFM and XRD.…”

Section: Resultsmentioning

confidence: 99%

“…Organic semiconductor (OSC), the core material of organic electronics, has been widely applied in organic field-effect transistors (OFETs), , organic light-emitting diodes (OLEDs), , and organic photovoltaics (OPVs). , The stability of OSCs has long been a key concern in their practicalization process, especially in the field of OFETs. − Although some strategies such as molecular design, − defect passivation, , and encapsulation , have been proposed to improve the environmental stability of OSCs, their electrical reliability is still unsatisfactory in the long-term storage and operation, − which is usually related to the degradation of the aggregate state (morphology change and/or crystalline phase transition) of OSC films. , However, few studies focused on the underlying mechanism and stabilization strategies of aggregate state degradation.…”

Section: Introductionmentioning

confidence: 99%

Strain-Balanced Organic Semiconductor Film for Improving the Stability of Organic Field-Effect Transistors

Guo

Wang

Yong

et al. 2023

ACS Appl. Mater. Interfaces

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Strain-induced aggregate state instability in organic semiconductor (OSC) films is a critical and bottleneck issue in the practicalization process of organic field-effect transistors (OFETs), but this issue lacks deep insight and effective solutions for a long time. Herein, we developed a novel and general strain balance strategy for stabilizing the aggregate state of OSC films and enhancing the robustness of OFETs. The charge transport zone in OSC films located at the OSC/dielectric interface always suffers from the intrinsic tensile strain induced by substrates and tends to dewet. By introducing a compressive strain layer, the tensile strain can be well balanced and OSC films attain a highly stable aggregate state. Consequently, the OFETs based on strain-balanced OSC heterojunction films exhibit excellent operational and storage stability. This work provides an effective and general strategy to stabilize OSC films and gives guidance in constructing highly stable organic heterojunction devices.

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Stability of organic thin-film transistors based on ultrathin films of dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT)

Abstract: Organic thin-film transistors (TFTs) based on ultrathin semiconductor films are potentially useful as highly sensitive physical, chemical or biological sensors and may also help in the development of a better...

Cited by 22 publications

References 64 publications

Flexible fully organic indirect detector for megaelectronvolts proton beams

Flexible fully organic indirect detector for megaelectronvolts proton beams

Pushing On-Chip Photosensitivity Forward Using Edge-Driven Vertical Organic Phototransistors

Strain-Balanced Organic Semiconductor Film for Improving the Stability of Organic Field-Effect Transistors

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