Stability and electronic properties of O vacancies and Ce4+ in Lu2SiO5 tuned by C doping

Jia, Lingchun; Gu, Ming; Song, Guowen; Zhu, Jiajie

doi:10.1016/j.optmat.2019.04.062

Cited by 7 publications

(7 citation statements)

References 21 publications

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“…C atom at the O site introduces some extra occupied and unoccupied states in the bandgap. Similar results were obtained in Lu 2 SiO 5 doped with C, see ref [8]…”

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confidence: 86%

“…Similar results were obtained in Lu 2 SiO 5 doped with C, see ref. [8]. The C O +Ce Y introduces some occupied states at 0.37, 0.58, 0.73, and 0.95 eV and unoccupied states at 2.35 and 2.83 eV as compared with the Ce Y .…”

Section: Resultsmentioning

confidence: 99%

“…Impact of carbon on defect structure in lutetium oxyorthosilicate, Lu 2 SiO 5 :Ce, another oxide scintillator, was studied in ref. [8]. Importantly, it was shown that defects by C doping strongly interact with nearby oxygen vacancies and Ce, whereas C doping affects the amount of the oxygen vacancies and Ce 4+ in Lu 2 SiO 5 .…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Effect of Carbon Doping on F‐Type Defects in YAG and YAG:Ce Crystals

Jia

Zhu

Boyaryntseva

et al. 2021

Physica Status Solidi (b)

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Ce‐doped yttrium aluminum garnet (YAG) is among the efficient rare‐earth garnet scintillators and phosphors. Herein, a computational and experimental study of complex F‐type defect centers formed in YAG by doping with cerium and carbon is addressed. The formation energies determined by ab initio calculations of different defects and atomic chemical potentials in YAG:Ce,C are discussed in O‐poor and O‐rich conditions corresponding to the crystal growth under Ar+CO reducing atmosphere, and postgrowth annealing in air, respectively. It is shown that as‐grown crystals contain numerous positively charged defects responsible for F‐type center formation, whereas mainly negative‐charged defects are remained after the annealing in air. The negatively charged defects located nearby Ce luminescence center occupying Y site may stabilize cerium in the tetravalent state and promote a hole transport to this luminescence center. This describes a high scintillation efficiency of Ce,C‐doped garnets. Furthermore, YAG:C and YAG:Ce,C with a high carbon concentration, in addition to luminescence peaked at 400 ns ascribed to F+‐type centers, possess a fast luminescence peaked around 650 nm that may be attributed to the complex defect centers. These unveiled features of the luminescence process in rare‐earth garnets may contribute to the development of efficient luminescence materials.

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“…C atom at the O site introduces some extra occupied and unoccupied states in the bandgap. Similar results were obtained in Lu 2 SiO 5 doped with C, see ref [8]…”

supporting

confidence: 86%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Effect of Carbon Doping on F‐Type Defects in YAG and YAG:Ce Crystals

Jia

Zhu

Boyaryntseva

et al. 2021

Physica Status Solidi (b)

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“…The peak at about 285 nm can be ascribed to the charge transition band (CTB) of Ce 4+ center. ,− The appearance of Ce 4+ can be attributed to the fact that part of Ce 4+ ions have not completely converted to Ce 3+ while being prepared with CeO 2 raw material through high-temperature solid-state reaction in air. Balancing the charge of the system can be achieved by the oxygen vacancy generated during the calcination process. , It is well-known that stable Ce 4+ center only contributes to faster scintillation decay in scintillation process and has no contribution to PL process, while the Ce 3+ center participates in both PL and scintillation process as luminescence center. It is important to keep the balance between decay time and light output of the Ce-activated scintillator by adjusting the ratio of Ce 3+ /Ce 4+ .…”

Section: Resultsmentioning

confidence: 99%

“…Balancing the charge of the system can be achieved by the oxygen vacancy generated during the calcination process. 31,32 It is well-known that stable Ce 4+ center only contributes to faster scintillation decay in scintillation process and has no contribution to PL process, while the Ce 3+ center participates in both PL and scintillation process as luminescence center. It is important to keep the balance between decay time and light output of the Ce-activated scintillator by adjusting the ratio of Ce 3+ /Ce 4+ .…”

Section: Methodsmentioning

confidence: 99%

Improved Phase Stability and Enhanced Luminescence of Calcite Phase LuBO₃:Ce³⁺ through Ga³⁺ Incorporation

Huang

Rui

et al. 2020

Inorg. Chem.

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The application of LuBO 3 :Ce 3+ (LBO:Ce) crystal as an excellent scintillation material has been limited due to its poor phase stability at high temperature or high pressure, so improving the phase stability is essential for promoting its development. Ga stabilized LuBO 3 :Ce 3+ (LGBO:Ce) is synthesized by solid-state reaction at 1200 °C. Powder X-ray diffraction patterns and Raman spectra at ambient pressure show that all the samples are pure calcite phase. In situ high-pressure synchrotron radiation XRD patterns illustrate that calcite phase LGBO:Ce exhibits more excellent phase stability than that of LBO:Ce under high pressure due to the superior compressibility of the [GaO 6 ] octahedral unit. The optical band gap of LGBO decreases from 5.58 to 4.64 eV after introducing 10% Ga, which leads to the decreased nonradiative transition and about double luminescence intensity as expected. More interestingly, the charge transition from O 2− to Ce 4+ is observed at about 290 nm in the absorption spectra. The X-ray photoelectron spectroscopy spectra indicate the ratio of Ce 4+ /Ce 3+ increases with increasing concentration of Ga 3+ , which can be attributed to the variation of energy separation between the 4f ground state of Ce 3+ and the Fermi energy level position. In contrast to the enhancement of PL intensity, the integrated X-ray excited luminescence intensity decreases after Ga 3+ incorporation attributing to the result of both decreased effective atomic number and ionization energy between 5d 1 level and conduction band. The thermal luminescence spectra show that after the incorporation of Ga 3+ the oxygen vacancy and intrinsic defects in LBO remain unchanged but that the concentration of oxygen vacancy significantly reduces. The mechanism of Ga 3+ incorporation on phase stability and luminescence properties of LBO:Ce has been proposed and discussed systematically.

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Lithium enrichment and migration mechanism in the evaporation process of sodium aulphate subtype salt lake brine

Huang

Liu

et al. 2023

Desalination

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Stability and electronic properties of O vacancies and Ce4+ in Lu2SiO5 tuned by C doping

Cited by 7 publications

References 21 publications

Effect of Carbon Doping on F‐Type Defects in YAG and YAG:Ce Crystals

Effect of Carbon Doping on F‐Type Defects in YAG and YAG:Ce Crystals

Improved Phase Stability and Enhanced Luminescence of Calcite Phase LuBO₃:Ce³⁺ through Ga³⁺ Incorporation

Lithium enrichment and migration mechanism in the evaporation process of sodium aulphate subtype salt lake brine

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Stability and electronic properties of O vacancies and Ce4+ in Lu2SiO5 tuned by C doping

Cited by 7 publications

References 21 publications

Effect of Carbon Doping on F‐Type Defects in YAG and YAG:Ce Crystals

Effect of Carbon Doping on F‐Type Defects in YAG and YAG:Ce Crystals

Improved Phase Stability and Enhanced Luminescence of Calcite Phase LuBO3:Ce3+ through Ga3+ Incorporation

Lithium enrichment and migration mechanism in the evaporation process of sodium aulphate subtype salt lake brine

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Product

Resources

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Improved Phase Stability and Enhanced Luminescence of Calcite Phase LuBO₃:Ce³⁺ through Ga³⁺ Incorporation