Spin transport in a lateral spin-injection device with an FM/Si/FM junction

Hwang, Woong Joon; Lee, H.J.; Lee, K.I.; Kim, Y.M.; Chang, Joonyeon; Han, Suk Hee; Shin, Moo Whan; Kim, Y.K.; Lee, W.Y.

doi:10.1016/j.jmmm.2003.12.1169

Cited by 9 publications

(2 citation statements)

References 6 publications

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“…The early failures to observe spin injection into silicon via a direct electrical contact with the ferromagnet [83][84][85][86][87][88] are usually attributed to the so-called impedance mismatch [89]. It denotes the problem of the loss of spin polarization of a current when it crosses the interface between a ferromagnet and a semiconductor, if the spin resistance r n s of the latter is much larger than the spin resistance r fm s of the ferromagnet.…”

Section: Impedance Mismatchmentioning

confidence: 99%

Silicon spintronics with ferromagnetic tunnel devices

Jansen

Dash

Sharma

et al. 2012

Semicond. Sci. Technol.

140

158

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In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology.

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Section: Impedance Mismatchmentioning

confidence: 99%

Silicon spintronics with ferromagnetic tunnel devices

Jansen

Dash

Sharma

et al. 2012

Semicond. Sci. Technol.

140

158

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“…Owing to its apparent advantages over other semiconductors, many groups tried to demonstrate phenomena attributed to spin transport in Si [31][32][33][34][35][36][37][38][39], but this was typically done with ohmic FM-Si contacts and two-terminal magnetoresistance measurements or in transistor-type devices [40,41], which are bound to fail owing to the 'fundamental obstacle' for ohmic spin injection mentioned in §1 [1][2][3][4]. Although weak spin-valve effects are often presented, no evidence of spin precession is available so the signals measured are ambiguous at best [42,43].…”

Section: Spins In Siliconmentioning

confidence: 99%

Introduction to spin-polarized ballistic hot electron injection and detection in silicon

Appelbaum

2011

Phil. Trans. R. Soc. A.

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Ballistic hot electron transport overcomes the well-known problems of conductivity and spin lifetime mismatch that plague spin injection attempts in semiconductors using ferromagnetic ohmic contacts. Through the spin dependence of the mean free path in ferromagnetic thin films, it also provides a means for spin detection after transport. Experimental results using these techniques (consisting of spin precession and spin-valve measurements) with silicon-based devices reveals the exceptionally long spin lifetime and high spin coherence induced by drift-dominated transport in the semiconductor. An appropriate quantitative model that accurately simulates the device characteristics for both undoped and doped spin transport channels is described; it can be used to recover the transit-time distribution from precession measurements and determine the spin current velocity, diffusion constant and spin lifetime, constituting a spin 'HaynesShockley' experiment without time-of-flight techniques. A perspective on the future of these methods is offered as a summary.

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Graphene Spintronics: Spin Generation and Manipulation in Graphene

Shen

Zeng

et al. 2014

Graphene Optoelectronics

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Spin transport in a lateral spin-injection device with an FM/Si/FM junction

Cited by 9 publications

References 6 publications

Silicon spintronics with ferromagnetic tunnel devices

Silicon spintronics with ferromagnetic tunnel devices

Introduction to spin-polarized ballistic hot electron injection and detection in silicon

Graphene Spintronics: Spin Generation and Manipulation in Graphene

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