Spin–orbit torque switching of a ferromagnet with picosecond electrical pulses

Jhuria, Kaushalya; Hohlfeld, J.; Pattabi, Akshay; Martin, Élodie; Córdova, Aldo Ygnacio Arriola; Shi, Xinping; Conte, Roberto Lo; Petit-Watelot, Sébastien; Rojas-Sánchez, J.-C.; Malinowski, Grégory; Mangin, Stéphane; Lemaı̂tre, A.; Hehn, Michel; Bokor, Jeffrey; Wilson, R. B.; Gorchon, Jon

doi:10.1038/s41928-020-00488-3

Cited by 81 publications

(58 citation statements)

References 53 publications

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“…1(a)]. Using a combination of real-time and post-pulse electrical measurements, we show that the simultaneous injection of dual pulses across the SOT-track and MTJ allows us to reduce the overall writing energy and voltages relative to switching by SOT or STT alone without compromising on the subns writing capabilities of SOT switching [25,36,40]. We further analyze the strength, symmetry, and time scale of…”

Section: Introductionmentioning

confidence: 99%

“…1(a)], which reduces read and write errors [30,37] while removing restrictions on the switching speed due to the high tunneling current [28,38]. In addition, the orthogonal alignment of the free-layer magnetization and the SOT allows for minimizing the delay preceding the reversal [25,39,40]. Three-terminal MTJs operated by SOTs, however, also present disadvantages compared to two-terminal MTJs operated by STT.…”

Section: Introductionmentioning

confidence: 99%

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Interplay of Voltage Control of Magnetic Anisotropy, Spin-Transfer Torque, and Heat in the Spin-Orbit-Torque Switching of Three-Terminal Magnetic Tunnel Junctions

et al. 2021

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We use three-terminal magnetic tunnel junctions (MTJs) designed for field-free switching by spin-orbit torques (SOTs) to systematically study the impact of dual voltage pulses on the switching performances. We show that the concurrent action of an SOT pulse and an MTJ bias pulse allows for reducing the critical switching energy below the level typical of spin transfer torque while preserving the ability to switch the MTJ on the sub-ns time scale. By performing dc and real-time electrical measurements, we discriminate and quantify three effects arising from the MTJ bias: the voltagecontrolled change of the perpendicular magnetic anisotropy, current-induced heating, and the spin transfer torque. The experimental results are supported by micromagnetic modeling. We observe that, depending on the pulse duration and the MTJ diameter, different effects take a lead in assisting the SOTs in the magnetization reversal process. Finally, we present a compact model that allows for evaluating the impact of each effect due to the MTJ bias on the critical switching parameters. Our results provide input to optimize the switching of three-terminal devices as a function of time, size, and material parameters.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Interplay of Voltage Control of Magnetic Anisotropy, Spin-Transfer Torque, and Heat in the Spin-Orbit-Torque Switching of Three-Terminal Magnetic Tunnel Junctions

et al. 2021

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“…[ 1–4 ] The discovery of spin‐orbit torque (SOT), in particular, opened a viable option to meet these requirements by offering the advantages of high speed, low read‐disturbance, and high endurance. [ 1,5–9 ] The successful development of wafer‐scale three‐terminal (3T) SOT magnetic tunnel junctions (MTJs) in complementary metal–oxide‐semiconductor (CMOS) compatible environment has furthered industrial interest for SOT‐magnetic random‐access memory (MRAM). [ 8,10 ] In addition, one can excite any magnetic material be it ferromagnetic, ferrimagnetic, or antiferromagnetic by SOT, thus providing a wide window for materials development.…”

Section: Introductionmentioning

confidence: 99%

Multi‐State Magnetic Tunnel Junction Programmable by Nanosecond Spin‐Orbit Torque Pulse Sequence

Lourembam

Huang

Chen

et al. 2021

Adv Elect Materials

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Multi‐state spin‐orbit torque (SOT) switching, particularly in magnetic tunnel junction (MTJ) geometry, is promising hardware for artificial intelligence due to its potential to form artificial neurons and to increase storage density per bit. Here, multi‐state switching is demonstrated in Pt/Co40Fe40B20/MgO‐based elliptical MTJ, fabricated on a 200 mm wafer platform, using nanosecond spin‐orbit torque pulses. Multi‐state switching is achieved using MTJs composed of a single ferromagnetic storage layer and without resorting to any domain‐wall pinning step. The genesis of the multi‐states, rather than the expected bistable states in MTJs, come from the formation and stabilization of metastable domains by the voltage pulse. The persistence and the probability of the mid‐states are investigated by two different spin‐orbit torque pulse sequences. Additionally, it is reported that size (>domain‐wall width), exchange constant (<20 × 10−12 J m‐1), current density amplitude (≈threshold values), and pulse sequence are important considerations for realizing multi‐state SOT MTJs. These industry‐grade MTJs can be leveraged to accelerate the development of spintronics‐based neuromorphic devices.

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“…extremely high current densities, reducing of which remained a long-existing vital challenge for modern spintronic R&D 1,[10][11][12] .…”

mentioning

confidence: 99%

Picosecond Optospintronic Tunnel Junctions for Non-volatile Photonic Memories

Wang

Cheng

et al. 2021

Preprint

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Perpendicular magnetic tunnel junctions are one of the building blocks for spintronic memories, which allow fast nonvolatile data access, offering substantial potentials to revolutionize the mainstream computing architecture. However, conventional switching mechanisms of such devices are fundamentally hindered by spin polarized currents, either spin transfer torque or spin orbit torque with spin precession time limitation and excessive power dissipation. These physical constraints significantly stimulate the advancement of modern spintronics. Here, we report an optospintronic tunnel junction using a photonic-spintronic combination. This composite device incorporates an all-optically switchable Co/Gd bilayer coupled to a CoFeB/MgO-based perpendicular magnetic tunnel junction by the Ruderman-Kittel-Kasuya-Yosida interaction. A picosecond all-optical operation of the optospintronic tunnel junction is explicitly confirmed by time-resolved measurements. Moreover, the device shows a considerable tunnel magnetoresistance and thermal stability. This proof-of-concept device represents an essential step towards ultrafast photonic memories with THz data access, as well as ultralow power consumption.

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Spin–orbit torque switching of a ferromagnet with picosecond electrical pulses

Cited by 81 publications

References 53 publications

Interplay of Voltage Control of Magnetic Anisotropy, Spin-Transfer Torque, and Heat in the Spin-Orbit-Torque Switching of Three-Terminal Magnetic Tunnel Junctions

Interplay of Voltage Control of Magnetic Anisotropy, Spin-Transfer Torque, and Heat in the Spin-Orbit-Torque Switching of Three-Terminal Magnetic Tunnel Junctions

Multi‐State Magnetic Tunnel Junction Programmable by Nanosecond Spin‐Orbit Torque Pulse Sequence

Picosecond Optospintronic Tunnel Junctions for Non-volatile Photonic Memories

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