Spin Orbit Torque Non-Volatile Flip-Flop for High Speed and Low Energy Applications

Jabeur, Kotb; Pendina, Grégory Di; Bernard-Granger, Fabrice; Prenat, Guillaume

doi:10.1109/led.2013.2297397

Cited by 82 publications

(44 citation statements)

References 14 publications

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“…[2][3][4][5][6] Moreover, an oscillation and precessional motion by SOT can be a candidate for various types of oscillators. [2][3][4][5][6] Moreover, an oscillation and precessional motion by SOT can be a candidate for various types of oscillators.…”

mentioning

confidence: 99%

Spin‐Orbit Torque Driven Magnetization Switching and Precession by Manipulating Thickness of CoFeB/W Heterostructures

Kim

Chun

Yoon

et al. 2020

Adv Elect Materials

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has been proposed to facilitate the electrical manipulation of magnetization switching for magnetic random access memory and magnetic logic devices by using these toques. [2][3][4][5][6] Moreover, an oscillation and precessional motion by SOT can be a candidate for various types of oscillators. [7][8][9] The spin Hall effect (SHE) and the Rashba-Edelstein interaction are expected to be the main mechanisms of the current-induced SOT, where the two main constituents are the damping-like torque and field-like torque. [10][11][12][13] In the SHE, a spin current is generated in a direction perpendicular to the applied longitudinal charge current flowing in a normal metal (NM) and accumulates spins between FM and NM layers, which exerts a damping-like torque to the magnetization in FM. [14,15] In the Rashba-Edelstein effect, which is caused by the broken space inversion symmetry at the interface, spin accumulation is generated in a direction transverse to the charge current direction in the film plane, which exerts a torque on the magnetization in a ferromagnet (FM). [16][17][18][19][20] In addition to the spin Hall and Rashba-Edelstein effects, the Oersted field generated by the current in a metallic film is an additional source of driving torque. [21,22] In a perpendicular magnetic anisotropy (PMA) structure, these torques generated from a nano-second electric pulse switch the magnetization by a domain wall motion. [23][24][25] It is known that the in-plane magnetic tunnel junction (MTJ) device by a spin transfer torque does not need an external field but takes a relatively long time for the switch due to an incubation time. [26,27] But, recently, researchers demonstrated an in-plane MTJ device by SOT showing a fast deterministic switching at a low current density. [28][29][30][31][32] This in-plane device offers various possibilities in application so that more intensive study is needed.In this work, we investigated the new aspect of in-plane SOT device depending on the amplitudes of damping-like torque, field-like torque, the Oersted field torque and demagnetization torque by a macro spin simulation. We found that the switching, oscillation, and precession could occur in the same heterostructure like W/CoFeB by using the change of the torque ratio with different NM and FM thicknesses. In addition, we constructed the dynamic map as a function of the efficiency of each torque. The expansion and the shrinkage of the switching region are reflected in the map depending on the current density.The switching of magnetization via spin-orbit torque has attracted much attention because of its fast switching and low power consumption. Numerous studies have focused on increasing the conversion efficiency from charge to spin current and out-of-plane magnetization cases. Recently, there have been reports on the fast and deterministic switching of in-plane magnetization devices. It is reported that an in-plane spin-orbit torque (SOT) device can archive the oscillation, precession, and direct switching by a combination of torques-c...

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mentioning

confidence: 99%

Spin‐Orbit Torque Driven Magnetization Switching and Precession by Manipulating Thickness of CoFeB/W Heterostructures

Kim

Chun

Yoon

et al. 2020

Adv Elect Materials

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“…Experimental results of the SOT device show that it is possible to switch at only 380ps [12]. Theoretical predictive studies of the SOT technology proclaim that the SOT device can perform 4× faster with a decrease of 20× in term of energy [1] when compared with STT-MTJ. Also, a predictive study of an ellipsoidal SOT device with dimensions of (30 nm × 60 nm) claims that at low voltage, an improvement of more than 100× can be achieved in term of energy-delay [13].…”

Section: Discussionmentioning

confidence: 99%

“…Besides, the NV feature of MTJs makes them very attractive for Application Specific Integrated Circuits (ASICs) applications. For instance, NV flip-flops can be designed to be used as a primitive cell into the ASIC design library offering safety, power reduction and instant on/off [1]. By view of this fact, both memory and logic design communities are interested in the integration of MTJs with CMOS circuits.…”

Section: Introductionmentioning

confidence: 99%

Study of Spin Transfer Torque (STT) and Spin Orbit Torque (SOT) Magnetic Tunnel Junctions (MTJS) at Advanced CMOS Technology Nodes

Jabeur¹,

Pendina²,

Prenat³

2017

ELELIJ

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“…6), developed at Spintec [22]. It is composed of a master latch made non-volatile using a pair of SOT-MRAMs (Fig.…”

Section: Ultra-fast Sot-mram Based Non-volatile Flip-flopmentioning

confidence: 99%

Beyond STT-MRAM, Spin Orbit Torque RAM SOT-MRAM for High Speed and High Reliability Applications

Prenat

Jabeur

Pendina

et al. 2015

Spintronics-Based Computing

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Spin Orbit Torque Non-Volatile Flip-Flop for High Speed and Low Energy Applications

Cited by 82 publications

References 14 publications

Spin‐Orbit Torque Driven Magnetization Switching and Precession by Manipulating Thickness of CoFeB/W Heterostructures

Spin‐Orbit Torque Driven Magnetization Switching and Precession by Manipulating Thickness of CoFeB/W Heterostructures

Study of Spin Transfer Torque (STT) and Spin Orbit Torque (SOT) Magnetic Tunnel Junctions (MTJS) at Advanced CMOS Technology Nodes

Beyond STT-MRAM, Spin Orbit Torque RAM SOT-MRAM for High Speed and High Reliability Applications

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