Spin lifetime of (In,Ga)As/GaAs (110) quantum wells

Abstract

Undoped and strained (In,Ga)As/GaAs quantum wells of different width and height were grown on GaAs(110) by molecular beam epitaxy and characterized by photoluminescence and atomic force microscopy. The effect of geometry and interface quality on the out-of-plane electron spin lifetime is investigated for a wide temperature range by both time-resolved Faraday rotation and time-resolved transmission. Due to the suppression of the D'yakonov Perel' spin relaxation mechanism, the electron spin lifetime of the (110) quantum well is peaked at a temperature, which depends on In concentration, whereas the quantum well width, interface roughness and compositional fluctuations in the quantum well determine the maximum value of the spin lifetime.

Spin dynamics in semiconductors

“…Similar temperature dependence of spin lifetime in(110) InGaAs quantum wells was studied in Ref [664]63.…”

Spin dynamics in semiconductors

“…62 A similar temperature dependence of spin lifetime in (110) InGaAs quantum wells was studied in Ref. [664]. 63 In InGaAs quantum wells larger spin relaxation anisotropy was found [665,666], which is due to the much stronger Dresselhaus spin-orbit coupling in InGaAs.…”

Interplay of Rashba/Dresselhaus spin splittings probed by photogalvanic spectroscopy –A review

“…Quantum well structures prepared on (110)’oriented GaAs substrates are of particular interest because in QWs of this orientation and special design extraordinarily slow spin dephasing can be achieved. Spin lifetimes up to several nanoseconds or even submicroseconds () have been reported in GaAs and other III–V semiconductor‐based heterostructures, for review see, e.g., (). As discussed in Section , in structures of this orientation the effective magnetic field induced by the BIA points along the growth axis and does not lead to the Dyakonov–Perel relaxation of spins oriented along this direction.…”