volume 146, issue 1-3, P193-195 2008
DOI: 10.1016/j.mseb.2007.07.032
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Abstract: We report on the high-resolution photoluminescence (PL) and electron spin resonance (ESR) studies of highly Er-doped (2 × 10 20 to 2 × 10 21 cm −3 ) MOCVD grown GaN epilayers. The high-resolution Fourier transform of the 4 I 13/2 → 4 I 15/2 PL of Er 3+ near 1.5 m, site-selective PL and PL excitation measurements show that in MOCVD grown GaN only one type of Er-centers exists. This conclusion has been confirmed by ESR measurements. In ESR the axial Er 3+ spectrum was observed with g || = 2.861 and g ⊥ = 7.645 …

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