Spectroscopic evaluation of n-type CdZnTe gamma-ray spectrometers

Nemirovsky, Y.; Asa, G.; Gorelik, Julia; Peyser, A.

doi:10.1007/s11664-000-0207-0

Cited by 9 publications

(5 citation statements)

References 18 publications

(15 reference statements)

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“…However, the crystal defects, such as cadmium vacancies, Te precipitates, dislocations, and the complexes of other point defects are formed during the crystal growth, which create deep traps in the band gap and decrease the resistivity and electron mobility life time product. The resistivity sometimes is recorded as lower than 10 6 Ω cm, which is considered unsuitable for detectors operation [7][8][9]. To overcome these problems, CZT crystal is usually doped with the elements of different groups like group III(In,Al) or group IV(Pb), which act as shallow levels or deep level donors to compensate Cd vacancies effectively.…”

Section: Introductionmentioning

confidence: 99%

Characterization of CdZnTe co-doped with indium and lead

Zaman

Wang

et al. 2015

Nuclear Instruments and Methods in Physics Research Section A:

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Section: Introductionmentioning

confidence: 99%

Characterization of CdZnTe co-doped with indium and lead

Zaman

Wang

et al. 2015

Nuclear Instruments and Methods in Physics Research Section A:

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“…Cd 1−x Zn x Te solid solutions with a bandgap ranging from 1.45 eV (CeTe) to 2.26 eV (ZnTe) have been proposed for many photovoltaic applications, including solar cells [1] and gammaray spectrometers [2], as well as studied theoretically [3,4]. Nevertheless, little is known about the structure of Cd 1−x Zn x Te layers on glass, a substrate that can provide large areas at low expense.…”

Section: Introductionmentioning

confidence: 99%

Structure of CdZnTe films on glass

Stolyarova

Edelman

Chack

et al. 2008

J. Phys. D: Appl. Phys.

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Polycrystalline Cd1−xZnxTe films were grown on glass substrates over the full range of compositions (0 < x < 1) by metal–organic chemical vapour deposition at 480 °C. The films (∼5 µm thick) showed uniform texture oriented along the ⟨1 1 1⟩ direction, perpendicular to the substrate, independent of the film composition. The dependence of the lattice parameter of cubic Cd1−xZnxTe on the composition followed Vegard's law. The thick Cd1−xZnxTe films were shown to be of a single phase and structurally stable. The average grain size in the thick films was in the range 3–5 µm. The dominant imperfections in the films were twins (mostly Σ = 3) and dislocations. The x-ray diffraction (XRD) FWHM parameter reached a maximum at x = 0.5. Transmission electron microscopy (TEM) in situ heating in the range 200–400 °C caused plastic deformation in the grains without causing ordering effects. Optical absorption and low-temperature photoluminescence measurements confirmed the XRD and TEM results.

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“…Introduction Cd 1--x Zn x Te bulk has been proposed for many photovoltaic applications such as solar cells [1], gamma-ray spectrometers [2,3] etc. However, little is known about the Cd 1--x Zn x Te layers on glass, an inexpensive, robust, and large area substrate.…”

mentioning

confidence: 99%

Spontaneous Ordering in Thin Polycrystalline Cd1-xZnxTe Films during Annealing

Edelman

Stolyarova

Chack

et al. 2002

phys. stat. sol. (b)

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Polycrystalline films of Cd1—xZnxTe (0 < x < 1) of ≈0.1 μm thickness on glass substrates were grown by Metal Organic Chemical Vapor Deposition at 480 °C. X‐ray diffraction and transmission electron microscopy (TEM) methods were used for the film characterization. TEM in‐situ heating the Cd1—xZnxTe films in the range of 200 to 300 °C caused the following structure transformations: strong recrystallization, twinning, and partial decomposition. The self‐diffusion coefficient, as estimated by TEM in‐situ recrystallization monitoring at 300 °C was found to be on the order of 10—8 cm2/s. A CuPt‐type superstructure grew spontaneously in the films during the film annealing.

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Spectroscopic evaluation of n-type CdZnTe gamma-ray spectrometers

Cited by 9 publications

References 18 publications

Characterization of CdZnTe co-doped with indium and lead

Characterization of CdZnTe co-doped with indium and lead

Structure of CdZnTe films on glass

Spontaneous Ordering in Thin Polycrystalline Cd1-xZnxTe Films during Annealing

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