Spectroscopic analysis and chemical kinetics modeling of a diamond deposition plasma reactor

Gicquel, A.; Hassouni, K.; Farhat, S.; Breton, Y.; Scott, Clayton; Lefebvre, M.; Péalat, M.

doi:10.1016/0925-9635(94)90229-1

Cited by 96 publications

(72 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To elucidate the diamond growth mechanism during PECVD, both vapor-phase and surface reactions need to be understood. Evaluations of the vapor phase have been based on optical emission spectroscopy (OES) and mass spectrometry (MS) [76][77][78][79][80][81][82][83]. Here, as described in Sect.…”

Section: Growth Mechanismmentioning

confidence: 99%

Homoepitaxial Diamond Growth by Plasma-Enhanced Chemical Vapor Deposition

Tokuda

2014

Topics in Applied Physics

View full text Add to dashboard Cite

Both carbon and silicon are group IV members, but carbon has the smaller atomic number. Diamond, with the same crystalline structure as that of silicon, is expected to act as the basic material for the next generation of high-power electronic, optoelectronic, bio/chemical electronic, quantum computing devices, etc. This is because diamond exhibits electrical properties similar to those of silicon, while having superior physical properties. In this chapter, the author reviewed and discussed the homoepitaxial growth of high-quality single-crystal diamond films with atomically flat surfaces, by using plasma-enhanced chemical vapor deposition (PECVD).

show abstract

Section: Growth Mechanismmentioning

confidence: 99%

Homoepitaxial Diamond Growth by Plasma-Enhanced Chemical Vapor Deposition

Tokuda

2014

Topics in Applied Physics

View full text Add to dashboard Cite

show abstract

“…The study has been performed in plasmas of two different microwave reactors (f= 2.45 GHz), (i) in H 2 -Ar plasmas with small admixtures of methane or methanol of a planar microwave reactor, at a pressure of 1.5 mbar [21], and (ii) in H 2 -CH 4 plasmas of a bell jar reactor, at pressures of 25 and 32 mbar [22]. The planar microwave plasma reactor used for these experiments is comparable to that shown in fig.…”

Section: Methodsmentioning

confidence: 99%

“…1. Details of the reactor, the infrared tuneable diode laser (TDL) and broadband ultraviolet spectrometer can be found elsewhere and only a brief account is given here [21,22,72].…”

Section: Methodsmentioning

confidence: 99%

On the Reaction Kinetics of Chemically Active Molecular Microwave Plasmas

Stancu

Pipa

Lombardi

et al. 2005

Contrib. Plasma Phys.

Self Cite

View full text Add to dashboard Cite

Key words Microwave plasmas, reaction kinetics, degree of dissociation, hydrogen, methyl radical, quantum cascade laser, boron monoxide. PACS 52. 20, 52.25, 52.75, 52.80 Recent studies of phenomena in molecular non-equilibrium microwave plasmas, which have been performed within the framework of the DFG-Sonderforschungsbereich 198, project A12, are presented in this review article. Special attention is devoted to the properties and kinetics of transient molecular species. The experimental methods used were optical emission and absorption spectroscopy. The main objectives of this contribution were threefold: (i) the determination of the degree of dissociation of hydrogen in plasmas, (ii) the quantitative detection of the methyl radical, and (iii) plasma process monitoring using quantum cascade lasers.

show abstract

“…In this article, we discuss the effects of concentration of methane in a hydrogen plasma for carbon material processing in a MW assisted bell jar reactor which has been used for growing CVD diamonds and graphene at LSPM [1] (schematic shown in Fig. 1).…”

mentioning

confidence: 99%

Effect of methane on stability of plasma in a MW-assisted hydrogen-methane plasma

et al. 2017

Self Cite

View full text Add to dashboard Cite

MW assisted Hydrogen-methane plasmas have been used extensively for growth of carbon materials such as CVD diamond, graphene and carbon nano-tubes. Graphene is usually grown at low pressures (>25 mbar) where as CVD diamond can be grown at relatively high pressures. Microwave radiation energizes the few free electrons to very high temperature, which collide with heavy species resulting in a self-sustaining plasma. In a conventional resonating MW cavity, the plasma occurs close to one of the available anti-nodes in the reactor and the substrate is placed closed to this anti-node enabling growth of diamond or graphene. The quality of the deposit depends on the coupling between microwave and the plasma which again depends on various factors such as MW power, pressure, concentration of the precursor gases etc. Understanding the coupling between the microwave and the plasma is critical for design and optimization of efficient MW reactors.In this article, we discuss the effects of concentration of methane in a hydrogen plasma for carbon material processing in a MW assisted bell jar reactor which has been used for growing CVD diamonds and graphene at LSPM [1] (schematic shown in Fig. 1). The reactor is characterized by having two anti-nodes, one close to the substrate and the other close to the top of the bell jar reactor. At normal operating conditions, the plasma is formed close to the substrate which is desirable. However as the MW power is increased, the plasma can become unstable as two plasma zones can be formed. We have observed that the addition of methane into the reactor affects the general plasma characteristics. The threshold MW power density (PMWD) at which the plasma becomes unstable have been measured for various concentration of methane in a MW bell jar reactor. This is achieved by visualizing the plasma emissive value at different conditions. Fig 2. shows the effect of concentration of methane on the threshold microwave power density. Addition of methane lowers the threshold microwave power density. Self-consistent simulations [2] have also been performed for these conditions (25 mbar). The difference between the numerical simulations and experiments may be due to uncertainty of absorbed microwave power, and also sensitivity of the numerical scheme. It has to be noted that only input power is available and there is no quantitative measurement of the MW power absorbed by the plasma. However, similar trends have been observed with experiments and numerical simulations as seen in Fig. 2. Fig. 2. Threshold Microwave power density at which plasma becomes unstable in a MW bell jar plasma reactor at 25 mbar Similar results have been observed numerically for different reactor pressures. The present results are important because the effective range of operation of the MW reactor depends on the precursor gas concentration and pressure. The present observation can be explained by the dominant ions present in the reactor. In a pure hydrogen plasmas, the dominant ions under these conditions is H 3 + . However, wit...

show abstract

Spectroscopic analysis and chemical kinetics modeling of a diamond deposition plasma reactor

Cited by 96 publications

References 15 publications

Homoepitaxial Diamond Growth by Plasma-Enhanced Chemical Vapor Deposition

Homoepitaxial Diamond Growth by Plasma-Enhanced Chemical Vapor Deposition

On the Reaction Kinetics of Chemically Active Molecular Microwave Plasmas

Effect of methane on stability of plasma in a MW-assisted hydrogen-methane plasma

Contact Info

Product

Resources

About