1994
DOI: 10.1103/physrevb.50.15047
|View full text |Cite
|
Sign up to set email alerts
|

Spectrally resolved four-wave mixing in semiconductors: Influence of inhomogeneous broadening

Abstract:  Users may download and print one copy of any publication from the public portal for the purpose of private study or research.  You may not further distribute the material or use it for any profit-making activity or commercial gain  You may freely distribute the URL identifying the publication in the public portal If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

2
35
0

Year Published

1995
1995
2002
2002

Publication Types

Select...
9

Relationship

5
4

Authors

Journals

citations
Cited by 64 publications
(37 citation statements)
references
References 23 publications
2
35
0
Order By: Relevance
“…3 and the corresponding T 2 times are indicated. The simulations contain qualitatively all the features of the experimental data, like the initial increase of the signal maximum for increasing , not expected for delta-pulses, 13 and the time shift of the signal for long delay times. Also, the simulations are in quantitative agreement with the measurements at long delay times.…”
Section: ͑4͒mentioning
confidence: 99%
“…3 and the corresponding T 2 times are indicated. The simulations contain qualitatively all the features of the experimental data, like the initial increase of the signal maximum for increasing , not expected for delta-pulses, 13 and the time shift of the signal for long delay times. Also, the simulations are in quantitative agreement with the measurements at long delay times.…”
Section: ͑4͒mentioning
confidence: 99%
“…10,[13][14][15] The underlying physics is approximately described by the optical Bloch equations. [16][17][18] The Coulomb interaction and the fermionic nature of the carriers, however, complicate this description so that the use of the semiconductor Bloch equations is generally more appropriate. 19,20 So far these coherent phenomena have been mainly studied in high-quality thin-film III-V layer structures.…”
Section: Introductionmentioning
confidence: 99%
“…This mechanism was previously predicted for the quantum beat in a V-type tree-level system such as the heavy-hole-light-hole exciton system. 24,25 In the excitonbiexciton case, we have to consider an E-type level system, which is depicted schematically in Fig. 5.…”
mentioning
confidence: 99%
“…To model the experiments quantitatively, taking into account the exciton and the biexciton transitions as well as their inhomogeneous broadening and the inhomogeneous width of the biexciton binding energy, we follow the analytical approach of Erland et al 24 We use a Gaussian distribution function g(␦ X ,␦ B ,) describing the inhomogeneous broadening ⌫ X and ⌫ B of the exciton ( X ) and biexciton ( B ) transition frequencies, with the correlation parameter 0рр1, given by g͑␦ X ,␦ B , ͒ϭ 4 ln͑2͒…”
mentioning
confidence: 99%