Spectral response of Au–Ti Schottky barrier on semi‐insulating GaAs

Ghita, R. V.; Logofatu, C.; Negrilǎ, C.; Cotirlan, C.; Ghita, P.; Manea, A. S.; Lazarescu, M. F.

doi:10.1002/pssa.200674107

Cited by 3 publications

(2 citation statements)

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“…For example, the semi‐insulating GaAs and Au Schottky barrier has been determined to be 0.68 ± 0.05 eV [ 53 ] in the temperature range 240–300 K, and the Schottky barrier height on Au‐Ti/semi‐insulating GaAs has been measured at 0.73 eV. [ 63 ] Biyikli et al. used I – V characteristics to estimate the Schottky barrier height of Au/Ti/n‐GaAs diodes; it remained almost constant: from 0.77 eV at 300 K to 0.82 eV at 180 K. [ 64 ] Because of the strong Fermi level pinning effect, only a small variation in the Schottky barrier height occurred upon changing the temperature.…”

Section: Resultsmentioning

confidence: 99%

Gallium Arsenide‐Based Active Antennas for Optical Communication Photodetection with Robustness to Voltage and Temperature

Lin

Chang

Chen

et al. 2021

Advanced Optical Materials

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Although gallium arsenide (GaAs) is one of the most commonly used semiconductor substrate materials, its intrinsic bandgap of 1.42 eV hinders the use of GaAs photodetectors for optical communication. In this study, hot‐electron‐based GaAs active antenna devices are demonstrated, displaying photoresponses well below the bandgap at the telecommunication wavelengths. Using a deep‐trench/thin metal (DTTM) active antenna, a metallic plasmonic structure, high photoresponsivities are achieved under zero bias at wavelengths of 1310 and 1550 nm. Even though the resistance of the semi‐insulating GaAs substrate is approximately 106 times larger than that of the n‐type silicon (Si) substrate, the photoresponsivities are commensurate with most previously reported hot‐electron n‐Si‐based photodetectors operating at communication wavelengths. Furthermore, the devices can be operated under a reverse‐biased voltage with significant enhancements in the photoresponsivities; the highest photoresponsivity (19.96 mA W−1 at 1310 nm) is greater than those reported in all previous studies. Moreover, these GaAs‐based devices are sufficiently robust to be operated over a wide range of operating temperatures (from −193 to +200 °C) while displaying a relatively large bandgap, low dark leakage currents, and high electron mobilities at low temperature. Because these devices can operate at high and low temperatures and at large voltage biases, they are suitable for use under harsh environmental conditions.

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Section: Resultsmentioning

confidence: 99%

Gallium Arsenide‐Based Active Antennas for Optical Communication Photodetection with Robustness to Voltage and Temperature

Lin

Chang

Chen

et al. 2021

Advanced Optical Materials

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“…In order to perform the surface charge compensation, a FG40 flood gun device (Specs Gmbh -Germany), has been used, with a 0.2 mA electronic current at 2 eV energy. The samples have been measured in an "as received" condition with no other surface cleanning treatment (chemical etching or Ar + ion beam bombardment) [17,18]. Extended spectra were recorded with a window of 1250 eV and 100 eV pass energy.…”

Section: Surface Characterizationmentioning

confidence: 99%

Surface Analysis of Inhibitor Film Formed by Poly(Vinyl Alcohol) on Stainless Steel in Sodium Chloride Solution

Samide

Ciuciu

Negrilǎ

2010

Port. Electrochim. Acta

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The corrosion inhibition of stainless steel in 0.9% NaCl solution in presence of poly(vinyl alcohol) (PVA) is discussed according to electrochemical measurements, such as potentiodynamic polarization and electrochemical impedance spectroscopy (EIS).The morphology of the surface was analyzed using Scanning Electron Microscopy (SEM). The composition of the layer formed on stainless steel surface was estimated using X-ray Photoelectron Spectroscopy (XPS) technique. Electrochemical measurements indicated that the presence of PVA in NaCl solution decreases the corrosion current and increases the polarization resistance. The values of inhibition efficiency obtained from polarization curves and EIS measurements are in good agreement. In absence and in presence of PVA, SEM images showed that the stainless steel surface was covered with a non-uniform layer and a uniform adsorbed film, respectively. XPS analysis indicated that the surface layer consists of PVA containing a small amount of other elements, such as Na and Cl.

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