Spectral diffusion and its influence on the emission linewidths of site-controlled GaN nanowire quantum dots

Holmes, Mark; Kako, Satoshi; Choi, Kihyun; Arita, Munetaka; Arakawa, Yasuhiko

doi:10.1103/physrevb.92.115447

Cited by 57 publications

(53 citation statements)

References 52 publications

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“…These decay times are an order of magnitude faster than those reported in c-plane InGaN QDs, which are typically a few ns, supporting the assertion that the use of the a-plane orientation for these QDs reduces the internal fields of the QDs, alleviates the QCSE, and allows higher oscillator strengths and faster repetition rates. Hence, the use of a-plane is another method, apart from ultrasmall c-plane dot-in-a-nanowire systems 45 and zinc blende structures, 46 to achieve radiative lifetime on the order of a few hundred ps in nitride QDs. Furthermore, the lifetimes remain short and relatively temperature insensitive across the studied temperature range, promising reliable GHz repetition under Peltier-cooled conditions.…”

Section: Resultsmentioning

confidence: 99%

Polarisation-controlled single photon emission at high temperatures from InGaN quantum dots

et al. 2017

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a Solid-state single photon sources with polarisation control operating beyond the Peltier cooling barrier of 200 K are desirable for a variety of applications in quantum technology. Using a non-polar InGaN system, we report the successful realisation of single photon emission with a g (2) (0) of 0.21, a high polarisation degree of 0.80, a fixed polarisation axis determined by the underlying crystallography, and a GHz repetition rate with a radiative lifetime of 357 ps at 220 K in semiconductor quantum dots. The temperature insensitivity of these properties, together with the simple planar epitaxial growth method and absence of complex device geometries, demonstrates that fast single photon emission with polarisation control can be achieved in solid-state quantum dots above the Peltier temperature threshold, making this system a potential candidate for future on-chip applications in integrated systems.

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Section: Resultsmentioning

confidence: 99%

Polarisation-controlled single photon emission at high temperatures from InGaN quantum dots

et al. 2017

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“…In particular, during the past decade III‐nitride based QDs have become promising candidates for single photon sources due to several advantages such as their wide range of emission wavelengths (owing to a wide range of available material bandgaps), their ability to operate at relatively high temperatures due to their sufficient exciton confinement, and recently, the possibility of high purity single photon emission . However, III‐Nitrides have limitations because they suffer from a spectral diffusion induced linewidth broadening (which can result in emission linewidths of a few meV) . This spectral diffusion occurs due to an interaction between the internal‐field induced exciton permanent dipole moment and the fluctuating electric field of charges trapped in relatively large densities of surrounding defects .…”

Section: Introductionmentioning

confidence: 99%

Measurement of the Emission Lifetime of a GaN Interface Fluctuation Quantum Dot by Power Dependent Single Photon Dynamics

Kang

Holmes

Arita

et al. 2018

Physica Status Solidi (a)

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Photon autocorrelation measurements are used to investigate the power dependent single photon emission of recently reported interface fluctuation GaN quantum dots (QDs), which exhibit relatively narrow emission linewidths. The intrinsic exciton lifetime of such a dot is evaluated to be 2.0 ± 0.1 ns from its power dependent single photon dynamics. This result is comparable with typical SK GaN QDs that emit at similar energy, and provides further evidence that the relatively narrow emission linewidth in such structures results from a cleaner dot environment.

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“…Upon changing the laser excitation power density, the occupation probability of the charge traps distributed in the vicinity of such QDs is altered [112]. As a result of this statistical process, a redshift of single nitride QD emission lines can be observed with rising excitation power density [106,109,113], which resembles the emission line shift of the group II emitter exemplified in Fig. 7.…”

Section: Statistical Analysis Of Individual Bound Excitonic Complexesmentioning

confidence: 84%

Probing Alloy Formation Using Different Excitonic Species: The Particular Case of InGaN

2019

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Since the early 1960s, alloys are commonly grouped into two classes that feature either bound states in the band gap (I) or additional, nondiscrete band states (II). Consequently, one can observe either excitons bound to isoelectronic impurities or the typical band edge emission of a semiconductor that shifts and broadens with rising isoelectronic doping concentration. Microscopic parameters for class I alloys can directly be extracted from photoluminescence (PL) spectra, whereas any conclusions drawn for class II alloys usually remain limited to macroscopic assertions. Nonetheless, we present a spectroscopic study on exciton localization in a mixed-crystal alloy (class II) that allows us to access microscopic alloy parameters. In order to illustrate our approach, we study bulk In x Ga 1−x N epilayers at the onset of alloying (0 ≤ x ≤ 2.4%) in order to understand their robustness to point and structural defects. Through an indepth PL analysis it is demonstrated how different excitonic complexes (free, bound, and complex bound excitons) can serve as a probe to monitor the dilute limit of class II alloys. From an x-dependent linewidth analysis we extract the length scales at which excitons become increasingly localized, i.e., their conversion from a free to a bound particle upon alloy formation. Already at x ¼ 2.4% the exciton diffusion length is reduced to 5.7 AE 1.3 nm at a temperature of 12 K; hence, detrimental exciton transfer mechanisms toward nonradiative defects are suppressed. In addition, the associated low-temperature PL data suggest that a single indium atom cannot permanently capture an exciton. The low density of silicon impurities in our samples even allows studying their local indium-enriched environment at the scale of the exciton Bohr radius based on impurity bound excitons. The associated temperature-dependent PL data reveal an alloying dependence for the exciton-phonon coupling. Thus, the formation of the random alloy can not only be monitored by the emission of various excitonic complexes, but also more indirectly via the associated coupling(s) to the phonon bath. Micro-PL spectra even give access to a probing of silicon bound excitons embedded in a particular environment of indium atoms thanks to the emergence of a series of individual and energetically sharp emission lines (full width at half maximum ≈300 μeV). Consequently, the present study allows us to extract microscopic properties formerly mostly only accessible for class I alloys.

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Spectral diffusion and its influence on the emission linewidths of site-controlled GaN nanowire quantum dots

Cited by 57 publications

References 52 publications

Polarisation-controlled single photon emission at high temperatures from InGaN quantum dots

Polarisation-controlled single photon emission at high temperatures from InGaN quantum dots

Measurement of the Emission Lifetime of a GaN Interface Fluctuation Quantum Dot by Power Dependent Single Photon Dynamics

Probing Alloy Formation Using Different Excitonic Species: The Particular Case of InGaN

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