Spectral analysis of the emission current noise exhibited by few layer WS2 nanosheets emitter

Microwave‐Assisted Synthesis of Few‐Layered TaTe2 and Its Application as Supercapacitor

“…But the successive layers in TMDC materials are interrelated through weaker van der Waals interlayer forces, which enables these layered materials to be simply exfoliated mechanically. [5,9,12] Further, depending on the mixture of transition metal atom and chalcogen atom, a wide variety of TMDCs are possible such as MoS 2 , [5,9,12,14,17] WS 2 , [13,15,18] MoSe 2 , [16] WSe 2 , [19] MoTe 2 , [20,21] WTe 2 , [22] GaTe, [23] phology, while the XRD data confirms the high crystalline quality and stable phase of the TaTe 2 formed. The supercapacitor cells were fabricated by using TaTe 2 nanosheets as anode material, platinum metal wire as a counterelectrode, and Ag/AgCl as reference electrode.…”

Vapour–liquid–solid growth of one-dimensional In2Se3 nanostructures and their promising field emission behaviour

“…The XPS spectrum shows signatures of In and Se only, implying purity of the specimen. The survey scan is further resolved in two different parts 30 corresponding to In and Se energy states. Figure 4 (c) shows two strong peaks at 445.15 and 452.85 eV with splitting of 7.7 eV corresponding to In 3d 5/2 and In 3d 3/2 , respectively, which is consistent with standard Indium.…”

“…We have measured the temperatures at different position in the quartz tube with respect to the source location and the temperature-position plot is depicted in figure 5. The synthesis was carried out by placing 30 the substrates at 22,20,18,16,14,12,10,7,3 position ~ 12 cm), formation of very fine ultra long In 2 Se 3 nanowires is observed (Fig. (g), Scheme: 2).…”

“…Amongst the various chalcogenides, indium selenide (In 2 Se 3 ) is a black crystalline, n-type; A III -B VI group compound with a layered structure. It usually crystallizes into double layers of nonmetal atoms, each consisting of the [Se-In-Se-In-Se] 30 sheets stacked together through the Se atoms along the c-axis. Normally, In 2 Se 3 is a direct narrow band gap semiconductor (E g ~1.35 eV, at 300 K).…”

Electrical characterization and ammonia sensing properties of MoS2/Si p–n junction

“…Recently, two-dimensional (2D) inorganic layered materials are being considered as potential candidates for planar device technologies and have attracted considerable interest [1][2][3][4][5][6]. Among the various inorganic 2D layered materials, molybdenum disulfide (MoS 2 ) has been investigated by a number of researchers due to its good electrical, mechanical, optical, magnetic and electrochemical properties [7][8][9][10][11][12][13].…”