Spectra of photoluminescence from silicon nanocrystals

Charge characteristics of the MOS structures with oxide films containing Si nanocrystals

“…The resulted PL spectra of obtained nc-Si films are typical of the nanocomposite structures Si NC/SiO 2 . Their photoluminescence properties, as was shown earlier in [3], are caused by radiative annihilation of excitons in quantum-size Si NC with the barrier SiO 2 layer.…”

“…Composition of the undoped nc-Si films is characterized by the SiO x suboxides with the presence of large concentrations of oxygen vacancies [8]. As was shown in work [3], the doping of nc-Si films with gold results in the effective saturation of dangling silicon bonds on the Si NC surface and in the SiO x matrix. The gold atoms act as catalysts for the SiO x to the SiO 2 oxidization process.…”

“…1). These regularities of formation of the SiO x films with Si NC structure are a result of their deposition from the back low-energy flow of erosive torch particles [3]. The sputtering of aluminium films on the frontal and rearward surfaces completed the formation of MOS structures.…”

“…The Al/nc-Si/p-Si structures containing nc-Si films on p-Si substrates (ρ = 10 Ohm×cm, (001)) were formed at the nc-Si film deposition by PLD in a vacuum chamber with residual gas pressure 10 −3 Pa for the size separation of Si particles and the formation of films with a mirror surface [3].…”

“…Doping by gold atoms was carried out for passivation of the unsaturated dangling bonds of silicon in the film and the formation of SiO 2 instead of SiO x (x < 2). Introduction of gold resulted in the increase of the middle sizes Si NC and their dispersion [3,4]. The YAG:Nd 3+ laser beam (wavelength 1.06 µm, energy and duration of pulses 0.2 J and 8 ns, respectively, and frequency of their repetition 25 Hz), working in the Q-switched mode, scanned the target.…”