Space-charge-limited current in thin-film diamond

Ashok, S.; Srikanth, K.; Badzian, Andrzej; Badzian, T.; Messier, R.

doi:10.1063/1.98038

Cited by 43 publications

(10 citation statements)

References 12 publications

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“…15,16 The observation of these phenomena implies carrier injection into undoped diamond. If the source of carriers for field emission in diamond is due to electrons injected from the electrical contact into the conduction band, then band bending is an alternate explanation of the results for nitrogen in Fig.…”

mentioning

confidence: 98%

Investigation of the temperature dependence of the field emission current of polycrystalline diamond films

Glesener

Morrish

1996

Applied Physics Letters

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This letter reports on the measurement of the field emission current dependence of doped polycrystalline diamond (PCD) films on temperature. The motivation for this type of measurement was to assess the thermal stability of PCD field emitters and gain some insight into a possible emission mechanism. Between room temperature and 300 °C, for a fixed electric field, the emission current from B doped films was found to remain constant. Heavily doped nitrogen films were also examined and the emission current was found to increase exponentially with an activation energy of 0.16 eV.

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mentioning

confidence: 98%

Investigation of the temperature dependence of the field emission current of polycrystalline diamond films

Glesener

Morrish

1996

Applied Physics Letters

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“…In addition, the J-E characteristics exhibit nearly symmetrical and obey a power law relationship over several decades of current, strongly suggestive of spacecharge-limited current ͑SCLC͒ in the presence of distributed traps. 17,18 This is especially possible for the EB-cured nanoporous film, due to electron-beam irradiation into a relatively loose bonding network of porous silicate. As considering SCLC conduction, the current density can be expressed as the following equation: 19 FIG.…”

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confidence: 99%

Leakage conduction behavior in electron-beam-cured nanoporous silicate films

Liu

Tsai

Chang

2005

Applied Physics Letters

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This letter explores the application of electron-beam curing on nanoporous silicate films. The electrical conduction mechanism for the nanoporous silicate film cured by electron-beam radiation has been studied with metal-insulator-semiconductor capacitors. Electrical analyses over a varying temperature range from room temperature to 150°C provide evidence for space-charge-limited conduction in the electron-beam-cured thin film, while Schottky-emission-type leaky behavior is seen in the counterpart typically cured by a thermal furnace. A physical model consistent with electrical analyses is also proposed to deduce the origin of conduction behavior in the nanoporous silicate thin film.

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“…For example, the resistivity of natural insulating diamond is typically greater than 1015 ohm-cm, and values as high as 1013 ohm-cm have been achieved in CVD films (1 1). Being able to produce CVD films with high resistivity is promising, but resistivitv alone does not determine whether a material is suitable for electronic applications because the resistivity can depend on carrier concentration, carrier mobility, and space charge (12). Traditional characterization uses the Hall effect to determine both the mobility and the concentration of the carriers, but in undoped, insulating materials this measurement is difficult because of the low intrinsic carrier concentration (13).…”

Section: Electrical Transport Properties Of Undoped Cvd Diamond Filmsmentioning

confidence: 99%

Electrical Transport Properties of Undoped CVD Diamond Films

Pan

Pianetta

Kania

et al. 1992

Science

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Polycrystalline diamond films synthesized by microwave-assisted chemical vapor deposition (MACVD) were examined with transient photoconductivity, and two fundamental electrical transport properties, the carrier mobility and lifetime, were measured. The highest mobility measured is 50 centimeters squared per volt per second at low initial carrier densities (<10(15) per cubic centimeter). Electron-hole scattering causes the carrier mobility to decrease at higher carrier densities. Although not measured directly, the carrier lifetime was inferred to be 40 picoseconds. The average drift length of the carriers is smaller than the average grain size and appears to be limited by defects within the grains. The carrier mobility in the MACVD films is higher than values measured in lower quality dc-plasma films but is much smaller than that of single-crystal natural diamond.

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Space-charge-limited current in thin-film diamond

Cited by 43 publications

References 12 publications

Investigation of the temperature dependence of the field emission current of polycrystalline diamond films

Investigation of the temperature dependence of the field emission current of polycrystalline diamond films

Leakage conduction behavior in electron-beam-cured nanoporous silicate films

Electrical Transport Properties of Undoped CVD Diamond Films

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