Some properties of ReSi2

Krontiras, C. A.; Grönberg, Leif; Suni, I.; d’Heurle, F. M.; Tersoff, J.; Engström, Ingvar; Karlsson, B.; Petersson, C. S.

doi:10.1016/0040-6090(88)90251-9

Cited by 27 publications

(12 citation statements)

References 31 publications

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“…The probability of ReSi 1.8 [4,7] or ReSi 1.75 [7] formation is much higher than that for ReSi 2 . According to [11,12], ReSi 2 has a body-centred orthorhombic lattice with a = 3.11 Å, b = 3.14 Å and c = 7.67 Å. This crystal structure is very close to the well-known structure of CaC 2 (MoSi 2 ).…”

Section: Introductionmentioning

confidence: 60%

“…Much attention has been paid to studying the methods for production of rhenium silicides [4,10] and the crystal [5,[10][11][12], optical [4,6,7], electrical [7,8,10] and some other properties of these materials. However, the electronic structure of their valence band has not been properly investigated, despite the considerable opportunities and abundant information furnished by modern spectroscopic techniques.…”

Section: Introductionmentioning

confidence: 99%

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Electronic structure of rhenium disilicides

Курганский

Переславцева

Levitskaya

et al. 2002

J. Phys.: Condens. Matter

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The valence band structure of amorphous and crystalline films of rhenium silicides has been studied by ultrasoft x-ray spectroscopy. A theoretical calculation of the electronic structure of bulk crystals and thin films of ReSi 2 and ReSi 1.75 was carried out. The experimental L 2,3 -spectra of silicon show the best correlation with the theoretical calculation for ReSi 1.75 . The decrease in the density of states at the Fermi level in ReSi 1.75 in comparison with ReSi 2 testifies that the phase with lack of silicon is more stable than the stoichiometric composition.

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Section: Introductionmentioning

confidence: 60%

Section: Introductionmentioning

confidence: 99%

Electronic structure of rhenium disilicides

Курганский

Переславцева

Levitskaya

et al. 2002

J. Phys.: Condens. Matter

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“…8 The origin of such phenomenon may be explained by the band structure of ReSi 1.75 . Up to now, both experimental [10][11][12][13] and theoretical 15,16 information about the carrier transport properties of ReSi 1.75 is limited. References 15 and 16 calculated its band structure with the LMTO and FLAPW method, respectively.…”

Section: ͑2͒mentioning

confidence: 99%

“…The results are in the range that has been reported before for binary ReSi 1.75 . [9][10][11][12][13] Values of Seebeck coefficients of ReGe x Si 1.75−x single crystals along ͓100͔ and ͓001͔ are presented together in Fig. 3.…”

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confidence: 99%

Anisotropy of mobility ratio between electron and hole along different orientations inReGexSi1.75−xthermoelectric single crystals

Inui

Zhang

2005

Phys. Rev. B

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It was recently found that ReSi 1.75 based semiconductor single crystals can be of either p or n type with a fixed composition, just depending on their different crystal orientations. To investigate the mechanism of this interesting phenomenon, we grow ReGe x Si 1.75−x ͑x = 0.02 and 0.04͒ single crystals with a floating zone method with radiation heating. The Seebeck coefficient and electric resistivity of these samples are measured along ͓100͔ and ͓001͔, respectively. The conduction mechanism is of p type along ͓100͔ and of n type along ͓001͔, like binary ReSi 1.75 , in the temperature range 50 to 800°C. The mobility ratio between electron and hole is calculated from the Seebeck coefficient data and it is highly anisotropic along two different orientations ͑about 0.4 to 0.6 along ͓100͔ while 4 to 5 along ͓001͔ direction͒, giving rise to the orientation-dependent conduction sign reversal phenomenon observed in ReSi 1.75 .

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“…The proposed conduction mechanism under forward bias ͑silicide biased positively with respect to the n-type silicon͒ is injection of electrons from the n-type silicon substrate into the silicide. Assuming ReSi 2 to be p type as found in previous studies, 11,12 an energy-band diagram for the heterojunction was constructed and is shown in Fig. 3.…”

Section: A the Resi 2 /N-si Hip Detectormentioning

confidence: 99%

ReSi2 thin-film infrared detectors

Becker

Mahan

Long

1995

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Two types of thin-film infrared-sensing devices have been investigated using the narrow band-gap semiconductor, rhenium disilicide ͑E g ϳ0.1 eV͒. These are the ReSi 2 /n-Si heterojunction internal photoemission ͑HIP͒ detector and the ReSi 2 thin-film photoconductor. The HIP device was found to be rectifying and to obey a Fowler-type law with a long-wavelength cutoff of ϳ2.1 m ͑0.59 eV͒ at room temperature. In hopes of approaching the fundamental limit for a ReSi 2 -based photonic detector, ϳ12 m ͑0.1 eV͒, the ReSi 2 photoconductor was explored. Indeed, the spectral response ͑measured at 10 K͒ of the ohmic photoconductor was found to extend to 6 m ͑the present limit of our measurement equipment͒, with no indication of a detection cutoff.

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Some properties of ReSi2

Cited by 27 publications

References 31 publications

Electronic structure of rhenium disilicides

Electronic structure of rhenium disilicides

Anisotropy of mobility ratio between electron and hole along different orientations inReGexSi1.75−xthermoelectric single crystals

ReSi2 thin-film infrared detectors

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